High-temperature Dielectric Properties of Gd2CuO4 Ceramics

J. Y. Mei,H. Wang,G. J. Wang,X. H. Sun,T. Li,C. M. Lei,C. C. Wang
DOI: https://doi.org/10.1016/j.physb.2011.12.133
IF: 2.988
2012-01-01
Physica B Condensed Matter
Abstract:A sample of Gd2CuO4 (GCO) has been prepared through the solid state reaction technique. Dielectric properties of this material have been measured in detail as functions of temperature (between 285 and 450K) and frequency (20Hz–10MHz). A step-like increase below 330K and a broad peak around 360K were observed in the real part of the permittivity (ε′) which were found to be originated from the oxygen vacancy hopping motions that cause a dipolar relaxation, followed by a Maxwell–Wagner relaxation as the hopping carriers are blocked by the interfaces and surfaces of the sample.
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