High Temperature Electrical Conductivity of Epitaxial Gd-doped CeO2 Thin Films

L Chen,CL Chen,DX Huang,Y Lin,X Chen,AJ Jacobson
DOI: https://doi.org/10.1016/j.ssi.2004.09.034
IF: 3.699
2004-01-01
Solid State Ionics
Abstract:Single-crystalline epitaxial Gd-doped CeO2 (GCO, Gd0.2Ce0.8O1.9) thin films were grown on (001) NdGaO3 (NGO) and LaAlO3 (LAO) substrates through pulsed-laser deposition. The electrical conductivity was investigated by AC impedance spectroscopy. The temperature dependence of the electrical conductivity gives an activation energy of 0.74 eV for GCO/NGO and a conductivity which is very close to that of the bulk polycrystalline material. For GCO films deposited on LAO, the conductivity of the substrate makes a significant contribution to the total measured conductivity.
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