High-temperature Dielectric Properties of Gd2O3-doped CeO2 Ceramics

D. Zhang,S. G. Huang,Y. M. Guo,C. C. Wang
DOI: https://doi.org/10.1016/j.matlet.2015.12.078
IF: 3
2015-01-01
Materials Letters
Abstract:Ceramic samples of Gd2O3-doped CeO2 (GDC) were fabricated by the co-precipitation method. The dielectric properties were investigated as functions of temperature (350–950K) and frequency (100Hz to 10MHz). Three relaxations with the activation energies of 0.76, 0.88, and 1.03eV in the order of ascending temperature were observed in GDC. The low-, middle-, and high-temperature relaxations are argued to be related to the bulk response caused by the Gd dopant-oxygen vacancy pairs, grain boundary, and contact effects, respectively.
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