Dielectric Behavior of Ce1-Gd O2-δ (0≤ X ≤0.1) Ceramics Prepared by Sol-Gel Method

G. B. Zhu,Y. M. Guo,J. Sun,S. T. Wang,J. Wang,L. Tong,C. C. Wang
DOI: https://doi.org/10.1016/j.jallcom.2019.01.231
IF: 6.2
2019-01-01
Journal of Alloys and Compounds
Abstract:The Ce1-xGdxO2-delta (GDC) with 0, 0.0005, 0.001, 0.01, and 0.1 ceramics were prepared by sol-gel method. Dielectric properties of these samples were investigated in the temperature range of 300-1000 K and frequency range of 10(2)-10(6) Hz. Our results revealed two thermally activated relaxations in all samples. The low-temperature relaxation (R1) with an activation energy of -0.70 eV has been widely reported in GDC ceramics. Instead of the usually mechanism of oxygen-vacancy-dopant defect pairs for R1, our results indicate that this relaxation is a Maxwell-Wagner relaxation resulting from surface layer effect caused by humidity sensitivity. The high-temperature relaxation (R2) is associated with oxygen vacancies, which exist in isolated state in the samples with the doping levels of x <= 0.01 and in clustered state in the sample with the doping level of x = 0.1. (C) 2019 Elsevier B.V. All rights reserved.
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