Abstract:Laser pulses can be utilized to induce intermediate states of phase change materials between amorphous and crystalline phases, making phase change materials attractive and applicable for multi-level storage applications. In this paper, intermediate states of Ge2Sb2Te5 thin films induced via employing a nanosecond multi-pulse laser with different energy and pulse duration were performed by Raman spectroscopy, reflection measurement and thermal simulations. Upon laser-crystallized Ge2Sb2Te5 films, optical functions change drastically, leading to distinguishable reflectivity contrasts of intermediate states between amorphous and crystalline phases due to different crystallinity. The changes in optical intensity for laser-crystallized Ge2Sb2Te5 are also accompanied by micro-structure evolution, since high-energy and longer pulses result in higher-level intermediate states (corresponding to high reflection intensity) and largely contribute to the formation of stronger Raman peaks. By employing thermal analysis, we further demonstrated that the variations of both laser fluence and pulse duration play decisive roles in the degree of crystallinity of Ge2Sb2Te5 films. Laser fluence is mainly responsible for the variations in crystallization temperature, while the varying pulse duration has a great impact on the crystallization time. The present study offers a deeper understanding of the crystallization characteristic of phase change material Ge2Sb2Te5.

Different crystallization processes of as-deposited amorphous Ge2Sb2Te5 films on nano- and picosecond single laser pulse irradiation

Laser Induced Crystallization of As-Deposited Amorphous Ge2Sb2Te5 Films

Crystallization of Amorphous Ge2Sb2Te5 Films Induced by a Single Femtosecond Laser Pulse

Crystallization dynamics of as-deposited amorphous AgInSbTe thin film induced by picosecond laser pulses

Comparison of optical transients during the picosecond laser pulse-induced crystallization of GeSbTe and AgInSbTe phase-change thin films: Nucleation-driven versus growth-driven processes

Real-Time Measurement Of Electrical And Optical Transients Of As-Deposited Amorphous Aginsbte Thin Films During Crystallization Induced By Single-Shot Picosecond Laser Pulses

Dynamics of Ultrafast Crystallization in As-Deposited Ge2Sb2Te5 Films

Amorphization induced in crystalline GeSb2Te4 films by single femtosecond pulses

Crystallization mechanism and course of the Ge2Sb2Te5 thin films under focused pulse laser

Fetntosecond laser-induced crystallization in as-deposited Ge1Sb2Te4 fihns

DYNAMICS OF AMORPHIZATION INDUCED IN CRYSTALLINE Ge1Sb2Te4 FILMS BY SINGLE FEMTOSECOND PULSES

Investigation of the Crystallization Characteristics of Intermediate States in Ge2Sb2Te5 Thin Films Induced by Nanosecond Multi-Pulsed Laser Irradiation

Single Pulse Laser‐Induced Phase Transitions of PLD‐Deposited Ge2Sb2Te5 Films

Ultrafast Temporal-Spatial Dynamics of Amorphous-to-crystalline Phase Transition in Ge2Sb2Te5 Thin Film Triggered by Multiple Femtosecond Laser Pulses Irradiation

Observation of Crystallization in Amorphous Phase Change Films Induced by Femtosecond Laser Pulses

Fast Phase Transition Process of Ge2sb2te5 Film Induced by Picosecond Laser Pulses with Identical Fluences

Transient phase change in picosecond laser pulse-driven crystallization process of as-deposited amorphous thin films

An Explanation of the Crystallization of Amorphous Ge2sb2te5 Films Induced by A Short Gaussian Laser Pulse

Influence of laser energy on the crystallization of Ge 2Sb 2Te 5 thin film prepared by pulsed laser deposition

Transient Study of Femtosecond Laser–Induced Ge2Sb2Te5 Phase Change Film Morphology

Transmission electron microscopy study of amorphous Ge 2 Sb 2 Te 5 films induced by an ultraviolet single-pulse laser