Abstract:High-resolution active-matrix organic light-emitting diode (AMOLED) thin-film transistor (TFT) backplane with lower power consumption is needed for augmented reality (AR) applications. The near-to-eye format of AR terminals needs facing several technical challenges, such as higher optical efficiency, wider field of view, lighter weight, and smaller size to accelerate widespread applications. For these reasons, downscaling of TFTs with amorphous-indium-gallium-zinc-oxide (a-IGZO) or LTPS is required. The channel length should be less than 1 μm and the flexible substrate is better than glass because of light weight and very thin structure. TFT technologies on polyimide (PI) substrate can support the applications for foldable and rollable displays. For flexible AMOLED, PI layer of 10 to 20 um is widely used for foldable displays. The PI layer is coated by slot coating on the top of a carrier glass with a buffer layer of carbon nanotubes (CNTs) and graphene oxide (GO) mixture coated by spray. This layer can reduce the adhesion force between PI and glass and thus mechanical detachment can be possible. The CNTs are conducting so that it can release the electrostatic discharge (ESD) damage because CNTs/GO layer exists on the bottom side of the PI substrate. The PI substrate is covered by SiO 2 and ZrAlO x layers (five layers in total starting with SiO 2 ) by plasma enhanced chemical vapor deposition and spray pyrolysis, respectively, which acts as a gas barrier. The amorphous ZrAlO x film by spray coating can be used as a high-k gate insulator and also a gas barrier. The threshold voltage of a-IGZO TFTs tends to shift toward negative gate voltage with decreasing the channel length. In this work, a ZrAlO x passivation layer is introduced for the short channel, coplanar a-IGZO TFT. A very thin ZrAlO x layer is deposited by spray pyrolysis on the top of a-IGZO TFT at the substrate temperature of 350 °C before interlayer deposition. The a-IGZO TFT with a very thin ZrAlO x layer exhibits the stable threshold voltage dependence with decreasing the channel length. The 0.8 μm channel length a-IGZO TFT with ZrAlO x layer by spray pyrolysis at the substrate temperature of 350 °C exhibits the field-effect mobility of 7.09 cm 2 V -1 s -1 , the threshold voltage of -0.6 V, and on/off current ratio of 3.3 × 10 7 . The formation of Zr-O bonds on the a-IGZO surface region reduces the carrier concentration in the a-IGZO TFT offset region, between source/drain contact and the channel, and blocks the carrier diffusion into the channel. This is the first reported self-aligned coplanar a-IGZO TFT under 1 μm channel length on a flexible substrate. Figure 1

Letter: A low-cost low-temperature thin-film-transistor backplane based on oxide semiconductor

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

Tft Backplane Based On Amorphous Oxide Semiconductor

Oxide TFT with multilayer gate insulator for backplane of AMOLED device

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

Investigation On Amoled Based On Zno:In:Nd Thin Film Transistors

P‐1.8: High Performance Amorphous IZO/IGZO Bilayer Thin Film Transistors for Ink‐jet Printed AMOLED Displays

High-performance IGZO-based TFTs with Stacked Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Dielectrics

Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.

Flexible IGZO Thin-Film Transistors and Inverter Circuits with Diode-Connected Transistors Fabricated on Transparent Polyimide Substrates

Oxide-Semiconductor-Based TFTs for Displays and Flexible Electronics

High-Performance Indium-Gallium-Zinc-Oxide Thin-Film Transistors with Stacked Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Dielectrics

High-Performance A-Ingazno Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric

High Performance Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Interface Engineering

High Reliability Of Igzo Tfts Using Low-Temperature Fabricated Organic Passivation Layers

(Invited) Short Channel Coplanar Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors on Polyimide Substrate for High Resolution Displays

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Room-Temperature Fabrication of High-Performance Amorphous In-Ga-Zn-O/Al2O3 Thin-Film Transistors on Ultrasmooth and Clear Nanopaper.

Comparative Study of Atomic Layer Deposited Indium-Based Oxide Transistors with a Fermi Energy Level-Engineered Heterojunction Structure Channel through a Cation Combinatorial Approach

Sub-100 Nm Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors with Gate Insulator of 4 Nm Atomic-Layer-Deposited AlOx

Flexible Low-Voltage IGZO Thin-Film Transistors with Polymer Electret Gate Dielectrics on Paper Substrates