Effect of V-defects on the Performance Deterioration of InGaN/GaN Multiple-Quantum-well Light-Emitting Diodes with Varying Barrier Layer Thickness
L. C. Le,D. G. Zhao,D. S. Jiang,L. Li,L. L. Wu,P. Chen,Z. S. Liu,J. Yang,X. J. Li,X. G. He,J. J. Zhu,H. Wang,S. M. Zhang,H. Yang
DOI: https://doi.org/10.1063/1.4824801
IF: 2.877
2013-01-01
Journal of Applied Physics
Abstract:The effect of quantum barrier (QB) thickness on performances of InGaN/GaN multiple-quantum-well light-emitting diodes (MQW LEDs) with relatively large barrier layer thicknesses has been investigated. It is found that the density and averaged size of V-defects increases with QB thickness, resulting in larger reverse- and forward-bias current in LEDs. Electroluminescence measurement shows that LED with thinner QB has higher internal quantum efficiency but lower efficiency droop-onset current density, which should be ascribed to the faster saturation of carrier leakage into V-defects. Correspondingly, above the droop-onset current density, severer Auger recombination and carrier overflow are induced by higher carrier density due to the less V-defect related carrier leakage, leading to the more serious droop phenomenon in LEDs with thinner QB.