Strong erbium photoluminescence from erbium-doped silica layers prepared using excimer VUV lamps

J. J. Yu,I. W. Boyd
DOI: https://doi.org/10.1049/el:20051618
2005-01-01
Electronics Letters
Abstract:Erbium-doped silica layers formed by a low-temperature UV approach using excimer VUV lamps have exhibited a strong 1.53 /spl mu/m erbium photoluminescence with the intensity being comparable to that from the thermally prepared layer while luminescence lifetime is even slightly longer than the latter. Luminescence peak intensity was found to increase with erbium atomic concentration in the range 0....
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