Abstract:To meet industry requirements of higher transistor count SRAM cells this paper is proposing, a nine-transistor configuration static random access memory (SRAM) cell which is accessible by dual bit line and performing simultaneous read and write operations. The suggested 9T (P9T PS) cell is constructed at 32 nm CMOS and is operating at an operating voltage 0.9 V. To justify the refined performance of proposed design various analysis are carried out that shows the static noise margins (SNM) that occurs while executing the read operation is 0.368 V and hold operation by the cell is 0.364 V, while the write operation has an SNM of 0.422 V. The access time for write and read functions of the cell is found to be 1.2 nS and 4.5 nS respectively. The P9T PS SRAM is compared with other dual-port and single-port 9T SRAM cells is stand out to be pre-eminence in performance in terms of noise immunity, temperature variations, power consumption (static and dynamic both), power delay product (PDP), SNM to PDP and area ratio (SAPR) and electric quality matric. Total leakage power for P9T PS cell is found to be 22.1 nW. The P9T PS bit cell is also found to be power efficient as it is consuming minimal power for all of the operations. Area layout of the P9T (PS) is found to be 22.372 μm 2 . The results are also supported by the process corner variation analysis for four different corners. LT-spice software is used to carry out all the simulations and analysis.

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