Abstract:Solution-processed oxide semiconductors have been considered as a potential alternative to vacuum-based ones in printable electronics. However, despite spin-coated InZnO(IZO) thin-film transistors(TFTs) have shown a relatively high mobility, the lack of carrier suppressor and the high sensitivity to oxygen and water molecules in ambient air make them potentially suffer issues of poor stability. In this work, Al is used as the third cation doping element to study the effects on the electrical, optoelectronic, and physical properties of IZO TFTs. A hydrophobic self-assembled monolayer called octadecyltrimethoxysilane is introduced as the surface passivation layer, aiming to reduce the effects from air and understand the importance of top surface conditions in solution-processed, ultra-thin oxide TFTs. Owing to the reduced trap states within the film and at the top surface enabled by the doping and passivation, the optimized TFTs show an increased current on/off ratio, a reduced drain current hysteresis, and a significantly enhanced bias stress stability, compared with the untreated ones. By combining with highcapacitance AlOx, TFTs with a low operating voltage of 1.5 V, a current on/off ratio of > 104 and a mobility of 4.6 cm 2 /(V·s) are demonstrated, suggesting the promising features for future low-cost, low-power electronics.

Non-aqueous solution processed ZnO thin film transistors

Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

Synthesis of ZnO Nanowires for Thin Film Network Transistors

Low-Temperature Sintering of In-Plane Self-Assembled ZnO Nanorods for Solution-Processed High-Performance Thin Film Transistors

Fabrication of Zinc Oxide Thin Film Transistors via Low-Temperature Solution Processing

Fully Solution-Processed Sodium Doped Zno Thin-Film Transistors Via A Low-Temperature Aqueous Route

Solution-processed zinc oxide thin films and top-gate thin film transistors

Solution-processed Zinc Oxide Field-Effect Transistors Based on Self-Assembly of Colloidal Nanorods.

Zinc Oxide Nanowire Networks for Macroelectronic Devices

Transparent Thin-Film Transistors Based on c-Axis Oriented, Verti cally Aligned ZnO Nanorod Arrays via Solution Pro cessing

Solution-Processed Zinc Oxilde Thin Films and Top-Gate Thin Film Transistors

Solution-Processed Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymer Passivation Layer

Electrical Properties of Wide Bandgap ZnMgO and Fabrication of Transparent Thin Film Transistors

Reactive Radiofrequency Sputtering-Deposited Nanocrystalline ZnO Thin-Film Transistors

Fabrication And Characteristics Of Zno-Based Thin Film Transistors

The fabrication and study of ZnO-based thin film transistors

Enhanced Performance of ZnO Thin-Film Transistors with ZnO Dual-Active-layer

Low-Voltage High-Stability InZnO Thin-Film Transistor Using Ultra-Thin Solution-Processed ZrO Dielectric

Zno Field-Effect Transistor Fabricated by Rf Magnetron Suputtering and Lithographic/Wet Etching Processes

High Performance Rf Sputtering Deposited Zno Thin-Film Transistors

Performance Enhancement of Solution-Processed InZnO Thin-Film Transistors by Al Doping and Surface Passivation