Abstract:To fabricate oxide thin-film transistors (TFTs) with high performance and excellent stability, preparing high-quality semiconductor films in the channel bulk region and minimizing the defect states in the gate dielectric/channel interfaces and back-channel regions is necessary. However, even if an oxide transistor is composed of the same semiconductor film, gate dielectric/channel interface, and back channel, its electrical performance and operational stability are significantly affected by the thickness of the oxide semiconductor. In this study, solution process-based nanometer-scale thickness engineering of InZnO semiconductors was easily performed via repeated solution coating and annealing. The thickness-controlled InZnO films were then applied as channel regions, which were fabricated with almost identical film quality, gate dielectric/channel interface, and back-channel conditions. However, excellent operational stability and electrical performance suitable for oxide TFT backplane was only achieved using an 8 nm thick InZnO film. In contrast, the ultrathin and thicker films exhibited electrical performances that were either very resistive (high positive VTh and low on-current) or excessively conductive (high negative VTh and high off-current). This investigation confirmed that the quality of semiconductor materials, solution process design, and structural parameters, including the dimensions of the channel layer, must be carefully designed to realize high-performance and high-stability oxide TFTs.

Low-Temperature Sintering of In-Plane Self-Assembled ZnO Nanorods for Solution-Processed High-Performance Thin Film Transistors

Solution-processed Zinc Oxide Field-Effect Transistors Based on Self-Assembly of Colloidal Nanorods.

Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

Synthesis of ZnO Nanowires for Thin Film Network Transistors

Fabrication of Zinc Oxide Thin Film Transistors via Low-Temperature Solution Processing

Solution-Processed Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymer Passivation Layer

Low-temperature fabrication of high performance indium oxide thin film transistors

Non-aqueous solution processed ZnO thin film transistors

Fully Solution-Processed Sodium Doped Zno Thin-Film Transistors Via A Low-Temperature Aqueous Route

Transparent Thin-Film Transistors Based on c-Axis Oriented, Verti cally Aligned ZnO Nanorod Arrays via Solution Pro cessing

Chemical and Electrical Properties of Low-Temperature Solution-Processed In–Ga–Zn-O Thin-Film Transistors

Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric.

Low-Temperature, All-Inorganic Nanoparticle Solution Process for Zno Nanowire Network Transistor Fabrication on A Polymer Substrate

Solution Processed Thin-Film Transistors with Bilayer Channel Consisting of ZnO Nanoparticles and SnO2

Low-Temperature Fabrication of Solution-Processed InGaZnO Thin-Film Transistors

High Carrier Mobility Low-Voltage ZnO Thin Film Transistors Fabricated at a Low Temperature Via Solution Processing

Low-Temperature ZnO TFTs Fabricated by Reactive Sputtering of Metallic Zinc Target

Low-Voltage High-Stability InZnO Thin-Film Transistor Using Ultra-Thin Solution-Processed ZrO Dielectric

Fully Solution-Processed Metal Oxide Thin-Film Transistors Via a Low-Temperature Aqueous Route

Solution Process-Based Thickness Engineering of InZnO Semiconductors for Oxide Thin-Film Transistors with High Performance and Stability

Surface Tension and Fluid Flow Driven Self-Assembly of Ordered ZnO Nanorod Films for High-Performance Field Effect Transistors.