Abstract:The interfacial structure plays a crucial role in controlling the growth of epitaxial film. However, it is still a formidable task to observe the interface structure at the atomic scale, because the detected signals from the interface become very weak due to the strong attenuation and decoherence when the incident wave passes through the films. With the advent of scanning tunneling microscopy (STM), significant progress has been made in observing the interface structure of thin films. Many studies have demonstrated the typical Si(111)-7×7 superstructure below the metal films in the past. Although the 7×7 superstructures are visible, the 12 Si adatoms in the unit cells can not be resolved. Hence, imaging the 7×7 superstructures below thin films at the atomic scale has not been achieved. In this work, we have grown the Cd epitaxial films with high quality on Si(111)-7×7 substrate, and realized the imaging of interface structure of Cd(0001) at atomic scale by using low temperature scanning tunneling microscopy. Under low bias voltage, we can clearly observe the atomic image of Si(111)-7×7, indicating the Si (111)-7×7 substrate remains intact during the growth process of Cd films. Moreover, due to the quantum size effect, the Cd films with even or odd monolayers exhibit distinct lateral resolution as well as surface roughness, even at the same bias voltage. With the bias variation, such kind of diversities can be reversed. We attribute the highly transparency of Cd(0001) films to the anisotropic effective mass of the electrons in Cd films, i.e. the transverse motion is much faster than the in-plane motion.

Atomic-scale Modification on Si(111)7×7 Surfaces

Atomic Structure Of The Si(112) 7x1-In Surface

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

STM Study of Si(337) Surface

Scanning Tunneling Microscopy Observation of Surface Superstructures During the Growth of in on In/Si(111) Surface

Study of Metastable Reconstructions of Si(111) Surface by STM

Nanostructure fabrication on silicon surfaces by atom transfer from a gold tip using an ultrahigh vacuum scanning tunneling microscope

An atomic structural model of (23×23)-R30° reconstruction proposed for 3C–SiC(111) crystallized islands on Si(111) by C60 precursor

Visualizing Buried Silicon Atoms at the Cd-Si(111)- 7×7 Interface with Localized Electrons

Fabricating Artificial Nanostructures with a Scanning Tunneling Microscope

Non-local Atomic Manipulation on Semiconductor Surfaces in the STM: the Case of Chlorobenzene on Si(111)-7×7.

Combining Scanning Tunneling Microscope (STM) Imaging and Local Manipulation to Probe the High Dose Oxidation Structure of the Si(111)-7×7 Surface

First-principles Study of Geometric and Electronic Structures of Si(111)-√7 × √3-in Surface Reconstruction

Deciphering the Atomistic Mechanism of Si(111)-7 × 7 Surface Reconstruction Using a Machine-Learning Force Field

Lanthanum-induced Quasi-One-dimensional Reconstructions on Si(111)

The atomic structure of Pt on Si(111) studied by scanning tunneling microscopy

Identifying the Numbers of Ag Atoms in Their Nanostructures Grown on a Si(111)-(7 × 7) Surface

Growth of Cu Films on Si(111)-7×7 Surfaces at Low Temperature: A Scanning Tunnelling Microscopy Study

Atomic Structure of Graphene on SiO2

Atomic Structure Of The Si(103)1x1-In Surface

The Transparency of Cd(0001) Films Grown on Si(111)-7×7:Imaging the Interface at Atomic Scale