Abstract:Poly(dimethylsiloxane) (PDMS) is usually considered as a dielectric material and the PDMS microchannel wall can be treated as an electrically insulated boundary in an applied electric field. However, in certain layouts of microfluidic networks, electrical leakage through the PDMS microfluidic channel walls may not be negligible, which must be carefully considered in the microfluidic circuit design. In this paper, we report on the experimental characterization of the electrical leakage current through PDMS microfluidic channel walls of different configurations. Our numerical and experimental studies indicate that for tens of microns thick PDMS channel walls, electrical leakage through the PDMS wall could significantly alter the electrical field in the main channel. We further show that we can use the electrical leakage through the PDMS microfluidic channel wall to control the electrolyte flow inside the microfluidic channel and manipulate the particle motion inside the microfluidic channel. More specifically, we can trap individual particles at different locations inside the microfluidic channel by balancing the electroosmotic flow and the electrophoretic migration of the particle.

Research and Development of Leakage Current Modeling for Polycrystalline Silicon Transistors

An empirical model of leakage current in poly-silicon TFTs

A Simple Leakage Current Model for Polycrystalline Silicon Nanowire Thin-Film Transistors

Modeling of the Band-to-Band Tunneling Current in Polysilicon TFT's Leakage Region

A Compact Model for Polysilicon TFTs Leakage Current Including the Poole–Frenkel Effect

Modeling of SiC MOSFET Behavior in Short-circuit Transient Considering Gate Leakage Current

Leakage Current Reduction Techniques in Poly-Si TFTs for Active Matrix Liquid Crystal Displays:A Comprehensive Study

Accurate and Fast Table Look-Up Models for Leakage Current Analysis in 65 Nm CMOS Technology

An Analytical Subthreshold Model for Polysilicon Thin-Film Transistors by a Quasi-Two-Dimensional Solution

A Fully Analytical Current Model for Tunnel Field-Effect Transistors Considering the Effects of Source Depletion and Channel Charges

Simple leakage current and 1/f noise expressions for polycrystalline silicon thin-film transistors

Experimental Characterization of Electrical Current Leakage in Poly(dimethylsiloxane) Microfluidic Devices

Direct Current Model of Polysilicon Thin Film Transistor Based on Discrete Grain Boundary Distribution

Modeling Hot-Carrier-Induced Reliability of Poly-Silicon Thin Film Transistors

Full-Chip Leakage Analysis In Nano-Scale Technologies: Mechanisms, Variation Sources, And Verification

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

A Model for Radiation-Induced Off-State Leakage Current in N-channel Metal-Oxide-semiconductor Transistors with Shallow Trench Isolation

Modeling of SILC based on electron and hole tunneling. I. Transient effects

Analytical Drain Current Model for Amorphous and Polycrystalline Silicon Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States

A Simple Model of DIGBL Effect for Polysilicon Films and Polysilicon Thin-Film Transistors

A New Extraction Method of Poly-Si Tft Model Parameters in the Leakage Region