Abstract:This paper critically examines the leakage current reduction techniques for improving the performance of poly-Si TFTs used in active matrix liquid crystal displays. This is a first comprehensive study in literature on this topic. The review assesses important proposals to circumvent the leakage current problem in poly-Si TFTs and a short evaluation of strengths and weaknesses specific to each method is presented. Also, a new device structure called the Triple Gate poly-Si TFT (TG-TFT) is discussed. The key idea in the operation of this device is to make the dominant conduction mechanism in the channel to be controlled by the accumulation charge density modulation by the gate (ACMG) and not by the gate-induced grain barrier lowering (GIGBL). Using twodimensional and two-carrier device simulation, it is demonstrated that the TG-TFT exhibits a significantly diminished pseudo-subthreshold conduction leading to several orders of magnitude reduction in the OFF state leakage current when compared to a conventional poly-Si TFT. The reasons for the improved performance are explained.

An empirical model of leakage current in poly-silicon TFTs

A Compact Model for Polysilicon TFTs Leakage Current Including the Poole–Frenkel Effect

Research and Development of Leakage Current Modeling for Polycrystalline Silicon Transistors

A Simple Leakage Current Model for Polycrystalline Silicon Nanowire Thin-Film Transistors

A New Extraction Method of Poly-Si Tft Model Parameters in the Leakage Region

Modeling of the Band-to-Band Tunneling Current in Polysilicon TFT's Leakage Region

An Analytical Subthreshold Model for Polysilicon Thin-Film Transistors by a Quasi-Two-Dimensional Solution

A Fully Analytical Current Model for Tunnel Field-Effect Transistors Considering the Effects of Source Depletion and Channel Charges

An analytic surface potential based non-charge-sheet poly-Si TFT model including substrate and film thickness effects

A physics-based charge sheet model of polysilicon thin film transistors for circuit simulation

Direct Current Model of Polysilicon Thin Film Transistor Based on Discrete Grain Boundary Distribution

Accurate and Fast Table Look-Up Models for Leakage Current Analysis in 65 Nm CMOS Technology

A Simple Model of DIGBL Effect for Polysilicon Films and Polysilicon Thin-Film Transistors

A potential-based analytic model for monocrystalline silicon thin-film transistors on glass substrates

Full RLGC Model Extraction of Through Silicon Via (TSV) with Charge Distribution Effects

Leakage Current Reduction Techniques in Poly-Si TFTs for Active Matrix Liquid Crystal Displays:A Comprehensive Study

A Charge-Based Capacitance Model for Double-Gate Tunnel FETs With Closed-Form Solution

Simple leakage current and 1/f noise expressions for polycrystalline silicon thin-film transistors

A Physics-Based Effective Mobility Model for Polycrystalline Silicon Thin Film Transistor Considering Discontinuous Energy Band at Grain Boundaries

A new analytical threshold voltage model for the doped polysilicon thin-film transistors

A Closed-Form DC Model for Amorphous Oxide Semiconductor TFTs Considering Both Non-Degenerate and Degenerate Conduction