Abstract:The ability of Ultra-Thin-Body (UTB) MOS devices to enable channel length scaling can only be realistically assessed by accurately taking key physical effects such as Quantum Confinement effects (QCEs) and Short channel effects (SCEs) into account. QCEs can accurately be considered only through a full band structure-based approach, which tends to be computationally inefficient, particularly at higher channel thicknesses, and is further exacerbated when required to be used to calculate 2-D channel electrostatics. Therefore, in this work, we propose a methodology to efficiently simulate the channel electrostatics of a UTB Double Gate MOSFET by solving the 1-D band structure with the 2-D Poisson's equation self consistently, determined by using the semi-empirical tight-binding approach only over those k-points that are likely to have a significant effect on the electrostatics. By showing that determining the 1-D Band structure at the source-channel junction is adequate to accurately determine the 2-D channel electrostatics, we show that this approach remains computationally tractable even at higher channel lengths. By following this approach, we obtain the 2-D profile of important device parameters such as electron density and channel potential, which, in turn, enables the determination of the thermionic current density and source-to-drain tunneling current density for a wide range of device parameters using Tsu-Esaki and WKB formalism respectively. Furthermore, the effect of phonon scattering, which is likely to manifest at longer channel lengths, is also incorporated in the drain current calculation, thus making this approach widely applicable.

Accurate and Fast Estimation of Junction Band-to-Band Leakage in Nanometer-Scale MOSFET

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

Simulation Study of Device Physics Issues in III&#x2013;V MOSFETs at 10 Nm Node

Accurate and Fast Table Look-Up Models for Leakage Current Analysis in 65 Nm CMOS Technology

Computation of Direct Tunneling gate leakage currents in nano-MOSFETs using ensemble Full Band Monte Carlo with quantum correction

Full-Chip Leakage Analysis In Nano-Scale Technologies: Mechanisms, Variation Sources, And Verification

A Leakage Power Estimation Method for Standard Cell Based Design

A Fully Analytical Current Model for Gate–Source Overlap Tunneling FETs as the Ternary Devices

Full-Chip Leakage Analysis for 65 Nm Cmos Technology and Beyond

Statistical analysis of full-chip leakage power for 65nm CMOS node and beyond

Statistical Analysis of Full-Chip Leakage Power Considering Junction Tunneling Leakage

Statistical Modeling and Analysis of Chip-Level Leakage Power by Spectral Stochastic Method

VSF: A Leakage Power Evaluation Model for CMOS Combinational Circuits

Full-Chip Leakage Verification for Manufacturing Considering Process Variations

An empirical model of leakage current in poly-silicon TFTs

Device Design for Low Power Electronics with Accurate Deep Submicrometer LDD-MOSFET Models

Study on leakage power estimation and reduction methodology of CMOS circuit

Accurate and Computationally Efficient Modeling of Nonquasi Static Effects in MOSFETs for Millimeter-Wave Applications

Accurate Temperature-Dependent Integrated Circuit Leakage Power Estimation is Easy

A State-Based Predictive Approach for Leakage Reduction of Functional Units

Computationally Efficient Band Structure-Based Approach for Accurately Determining Electrostatics and Source-to-Drain Tunneling Current in UTB MOSFETs