Full-Chip Leakage Analysis for 65 Nm Cmos Technology and Beyond

Jiying Xue,Tao Li,Yangdong Deng,Zhiping Yu
DOI: https://doi.org/10.1016/j.vlsi.2010.05.002
IF: 1.345
2010-01-01
Integration
Abstract:This work proposes a full-chip leakage analysis framework for 65nm technology and beyond. Analytical models are first constructed to capture the impact of process parameters on leakage current. Then a methodology is introduced to characterize leakage-related process variations in a systematic manner. On such a basis, an efficient procedure is developed to analyze the state-dependent power dissipation due to leakage of a large circuit block by taking into account different leakage mechanisms. Unlike many traditional approaches that rely on log-normal approximations, the proposed algorithm applies a quadratic model of the logarithm for the full-chip leakage current. It is able to handle both Gaussian and non-Gaussian parameter distributions. The model is validated with test chips manufactured with a commercial 65nm CMOS process. Validation results prove that the proposed modeling methodology could achieve a higher accuracy than that from existing methods. Moreover, a full-chip leakage analysis using the developed model can be orders of magnitude faster than a Monte Carlo based approach.
What problem does this paper attempt to address?