Abstract:Gate oxide breakdown (OBD) is a key factor limiting the useful lifetime of an integrated circuit. Unfortunately, the conventional approach for full chip OBD reliability analysis assumes a uniform oxide thickness and worst-case temperature for all devices. In practice, however, gate oxide thickness varies from die-to-die and within-die and hence may cause different reliability for different devices even chips. Moreover, due to the increased across-die temperature variation, such difference may be exacerbated. Thus, as the precision of variation control worsens, an alternative reliability analysis approach is needed. In this paper, we propose a statistical framework for chip-level gate OBD reliability analysis while considering both die-to-die and within-die components of thickness variations as well as the across-die temperature variation. The thickness of each device is modeled as a distinct random variable and thus the full chip reliability estimation problem is defined on a huge sample space of several million devices. We observe that the chip-level OBD reliability function is independent of the relative location of the individual devices. This enables us to transform the problem such that the resulting representation can be expressed in terms of much fewer random variables. Using this transformation, we present a computationally efficient and accurate approach for estimating the full chip reliability while considering spatial correlations of gate oxide thickness as well as temperature variation. We show that, compared to Monte Carlo simulation, the proposed method incurs an error of only around 1% while improving the runtime by more than three orders of magnitude.

An efficient algorithm for modeling spatially-correlated process variation in statistical full-chip leakage analysis.

Statistical Modeling and Analysis of Chip-Level Leakage Power by Spectral Stochastic Method

A statistical approach for full-chip gate-oxide reliability analysis

Full-Chip Leakage Analysis In Nano-Scale Technologies: Mechanisms, Variation Sources, And Verification

Full-Chip Leakage Analysis for 65 Nm Cmos Technology and Beyond

Process Variation and Temperature-Aware Full Chip Oxide Breakdown Reliability Analysis.

Statistical analysis of full-chip leakage power for 65nm CMOS node and beyond

Efficient Full-Chip Statistical Leakage Analysis Based on Fast Matrix Vector Product.

Variation-aware gate sizing and clustering for post-silicon optimized circuits.

Statistical Analysis of On-Chip Power Delivery Networks Considering Lognormal Leakage Current Variations with Spatial Correlation

Run-time Demand Estimation and Modulation of On-Chip Decaps at System Level for Leakage Power Reduction in Multicore Chips

Statistical Analysis of Full-Chip Leakage Power Considering Junction Tunneling Leakage

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

Full-Chip Leakage Verification for Manufacturing Considering Process Variations

Efficient Spatial Variation Modeling of Nanoscale Integrated Circuits Via Hidden Markov Tree

Statistical Timing and Power Optimization of Architecture and Device for FPGAs

Accurate and Fast Table Look-Up Models for Leakage Current Analysis in 65 Nm CMOS Technology

An Efficient Leakage-Aware Thermal Simulation Approach for 3D-Ics Using Corrected Linearized Model and Algebraic Multigrid.

Efficient Spatial Variation Modeling Via Robust Dictionary Learning

Intra-Die Spatial Correlation Extraction With Maximum Likelihood Estimation Method For Multiple Test Chips

Thermal Effects with Leakage Power Considered in 2D/3D Floorplanning