Combinatorial Generation and Analysis of Nanometer- and Micrometer-Scale Silicon Features via “Dip-Pen” Nanolithography and Wet Chemical Etching

D. A. Weinberger,S. Hong,C. A. Mirkin,B. W. Wessels,T. B. Higgins
DOI: https://doi.org/10.1002/1521-4095(200011)12:21<1600::AID-ADMA1600>3.0.CO;2-6
IF: 29.4
2000-01-01
Advanced Materials
Abstract:In dip-pen nanolithography, molecules are "written" onto substrates using an atomic force microscope tip. It is shown here that nanostructures generated using this technique can be used as resists for generating three-dimensional multilayered solid-state structures such as that shown in the Figure (a Au/Ti/Si trilayer nanoscale pillar) via wet chemical etching (see also cover).
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