High Moment FeNiN Films Prepared by Dual Ion Beam Sputtering

HY Wang,J Liu,YJ He,WH Mao,H Chen,HY Zhang,HS Huang,EY Jiang

DOI: https://doi.org/10.1143/jjap.41.1326

IF: 1.5

2002-01-01

Japanese Journal of Applied Physics

Abstract:High moment FeNiN films with soft magnetic properties were prepared on glass and Si (100) substrates by a dual ion beam sputtering (DIBS) system. Effects of nitrogen concentrations and substrate temperatures on the phase Structure and magnetic properties of FeNiN films were investigated. Nitrogen concentration of the FeNiN film was saturated to 20at.% as nitrogen partial pressure was higher than 3 x 10(-2) Pa. FeNiN films consisted of alpha-(FeNi), alpha"-(Fe,Ni)(16)N-2, gamma'-(Fe,Ni)(4)N phases or a mixture of these phases under different deposition parameters. The magnetic properties depended dramatically on the phase structure. FeNiN films with 8-12at.% nitrogen concentrations deposited at 140-180degreesC exhibited alpha"-(Fe, Ni)(16)N-2 and gamma'-(Fe,Ni)(4)N phases, high saturation magnetization of 2.2-2.3 T and low coercivity of 80-110 A/m.