Preparation of a FeNiN film, its microstructure and its magnetic property analysis

刘军,王合英,陈默轩,茅卫红,黄贺生
DOI: https://doi.org/10.3321/j.issn:1000-0054.2001.12.004
2001-01-01
Abstract:The magnetic properties of FeNi compounds were improved by doting nitrogen onto FeNi films which were prepared by Ion Beam Aided Sputtering. Experiments showed that the FeNiN film structure is similar to that of bulk FeNi and the Nitrogen does not react with Nickel. The Nickel exists in the film by replacement at low Ni concentrations. Phase transformation occurred in the FeNiN film at high Ni concentration. A FeNiN films was obtained with a saturation magnetization of about 2.0 T.
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