Abstract:The microstructures of AlN films grown by high-temperature hydride vapor phase epitaxy (HT-HVPE) on (0 0 0 1) sapphires with three different kind of buffer layers (BLs) were investigated by plan-view and cross-sectional transmission electron microscopy (TEM). The buffer layers were grown by HVPE at 1350 degrees C, MOCVD 1050 degrees C and HVPE at 1050 degrees C. The microstructures and in-plane misorientation of buffer layers are related to the crystal quality of the AlN films and dislocation evolution. The misorientation angles and average grain sizes of buffer layers were analyzed quantitatively using Moire fringe method. The buffer layer grown at 1350 degrees C by HVPE was recognized to be single crystalline, but buffer layers with mosaic-structure are formed at 1050 degrees C either by MOCVD or HVPE. High growth temperature of 1350 degrees C significantly reduced the in-plane misorientation of the buffer layer and the dislocation density was greatly reduced. AlN films on high-temperature growth buffer layers (similar to 1350 degrees C) have the lowest treading dislocation density similar to 3x10(8) cm(-2) determined using a combination of X-ray rocking curve measurement and plan-view transmission electron microscopy.

Microstructure evolution of GaN buffer layer on MgAl2O4 substrate

Microstructure analysis on buffer layer in GaN/MgAl2O4

Microstructure Evolution in Metal-organic Vapor Phase Epitaxy-Grown GaN with Different Low-Temperature Buffer Layer Annealing Time

Transmission Electron Microscopy Study of the Microstructure of a GaN Film Grown on Sapphire by Organometallic Vapor Phase Expitaxy

Surface Morphology of AlN Buffer Layer and Its Effect on GaN Growth by Metalorganic Chemical Vapor Deposition

Microstructures of GaN Buffer Layers Grown on Si(111) Using Rapic Thermal Process Low-Pressure Metalorganic Chemical Vapor Deposition

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

Al diffusion in GaN buffer layer during the growth of GaN film

Influence of the Growth Temperature of AlN Buffer on the Quality and Stress of GaN Films Grown on 6h–sic Substrate by MOVPE

Microstructure and Interface Control of Gan/Mgal2o4 Grown by Metalorganic Chemical Vapor Deposition: Substrate-Orientation Dependence

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on sapphire substrates

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on (0 1 1 2) sapphire substrates

Properties of low-temperature-deposited GaN buffer layers

Influence of the Aln Interlayer Crystal Quality on the Strain Evolution of Gan Layer Grown on Si (111)

Microstructural and Compositional Characteristics of GaN Films Grown on a ZnO-buffered Si (111) Wafer.

Influence of AlN Buffer Layer Thickness on Structural Properties of GaN Epilayer Grown on Si (111) Substrate with AlGaN Interlayer

Microstructure and Influence of Buffer Layer on Threading Dislocations in (0001) AlN/sapphire Grown by Hydride Vapor Phase Epitaxy

Low-temperature and Global Epitaxy of GaN on Amorphous Glass Substrates by Molecular Beam Epitaxy Via a Compound Buffer Layer

Transmission Electron Microscopy and Atomic Force Microscopy Studies of Gan Films Grown on Alas/Gaas(001) Substrates

Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

Influence of Sputtered AlN Buffer on GaN Epilayer Grown by MOCVD