Abstract:Lithium niobate (LiNbO3) thin film is an important material for optical waveguide. Recently, particular attention has been paid to the application of LiNbO3 (LN) thin films. To develop and fabricate integrated optical devices, the growth of thin LN epitaxial films onto silicon substrate is of great importance and particularly attractive. In this paper, LN thin film was grown by pulsed laser deposition (PLD). Stoichiometric LN ceramic is used as a target. Amorphous SiO2 buffer layer was coated on Si (100) wafer by in-situ themal oxidation before the deposition. The optimized condition of growing LN film on Si (100) by PLD is found: O2 pressure 30 Pa, substrate temperature 600°C. Only (006) reflection of LN was observed besides the (002) reflection of silicon substrate from XRD pattern. The FWHM (~0.21°) of (006) reflection peak is much narrower than the value reported by Lee [1]. The results of XRD measurement indicate that the LN film was epitaxially grown along the c-axis. Transmission electron microcopy (TEM) patterns confirm that the film has superior crystalline quality. The optical waveguiding properties of the films were demonstrated by a prism coupler method. Fully c-oriented thin film could be grown on silicon substrate by PLD without the buffer layer and the induced electric field.

Low Biased Voltage Induced Textured Growth of LiNbO3 Films on Silicon Wafer

Low Electric Field Induced (001) Oriented Growth of LiNbO3 Films by Pulsed Laser Ablation

The Role of an Electric Field Applied During Pulsed Laser Deposition of LiNbO3 and LiTaO3 on the Film Orientation

In-situ Poling of Lithium Niobate Films on Silicon Wafer by Applying a Low Electric Field During Pulsed Laser Deposition

Low Electrical Field Induced Oriented Growth of Ferroelectric LiNbO3thin Films and Multilayers

Growth of textured LiNbO3 thin film on Si (111) substrate by pulsed laser deposition

Polarization State Dependence of Laser-Induced Domain Nucleation in Lithium Niobate Crystals Investigated by Digital Holography

Microstructure of LiNbO3 Thin Films Grown on Silicon Substrates by Pulsed Laser Deposition

Growth and Optical Properties of Completely C-Axis Orientated LiNbO3 Films Deposited by Pulsed Laser Deposition

Influence of substrate temperature on the growth and optical waveguide properties of oriented LiNbO3 thin films

Optical Waveguide Properties of LiNbO3 Thin Films on Silicon Substrates

Crystallographic Orientation Dependence of Dielectric Response in Lead Strontium Titanate Thin Films

Highly C-axis oriented LiNbO3 thin film on amorphous SiO2 buffer layer and its growth mechanism

Highly C-Axis Oriented LiNbO3 Thin Film Grown on SiO2/Si Substrates by Pulsed Laser Deposition

Effects of substrate temperature on the growth of oriented LiNbO3 thin films by pulsed laser deposition

Pulsed Laser Deposition of (001) Textured LiNbO3 Films on Al2O3/SiO2/Si Substrate

Highly C-axis Oriented LiNbO_3 Thin Film on Amorphous SiO_2 Buffer Layer by PLD

Effect of growth rate on the characteristics of LiNbO3 waveguide thin films on SiO2/Si substrate by PLD

Highly c-axis oriented LiNbO3 thin film directly grown on Si(111) substrate by pulsed laser deposition

GROWTH AND CHARACTERIZATION OF C-ORIENTED LiNbO3 THIN FILMS ON Si (100) BY PLD

Pulsed Laser Deposition of C-Oriented Optical Waveguiding Bilayered Films on Silicon Wafers