Abstract:Residual stresses develop in the sol-gel-derived ferroelectric thin films during the transformation of the metal-organic gel to the metal oxide upon thermal treatment and due to the thermal and elastic mismatch between the Pb(Zrx,Ti1−x)O3 (PZT) film and the substrate materials during cooling. In this study, residual stresses were determined using the wafer curvature method after the deposition of multilayer PZT film on platinized (100) silicon wafers. A multilayer model for stress analysis was used to calculate the residual stress in PZT films of three different compositions: x=0.4, x=0.52, and x=0.6. Orientation dependent residual stresses were found in compositions containing the tetragonal phase, with x=0.4 and x=0.52. Depending on the fraction of (100) orientated domains low compressive or low tensile stress was found in Pb(Zr0.4Ti0.6)O3 (PZT 40∕60). Higher residual stress was found in PZT films consisting of only rhombohedral crystallographic structure (PZT 60∕40) while the residual stress in PZT films with morphotropic boundary composition (PZT 52∕48) was significantly dependent on the film orientation and the phase composition and could range from 17to90MPa. The effect of the film orientation on residual stress was found to be a function of the anisotropic thermal expansion coefficient of PZT. The contribution of the thermal and elastic properties of materials to the total wafer curvature was investigated and discussed. Finally, the residual stress results calculated with the four layer model were compared to the results calculated using the Stoney equation.

Effect of reannealing treatment in alternating electric field on residual strain in sol–gel derived Pb(Zr,Ti)O3 film

Effect of Annealing Conditions on Residual Stress in Sol-Gel-derived Pb(Zr0.52Ti0.48)O3 Film

Effect of electric-field-assisted thermal treatment on the strain and ferroelectric properties of (100)-oriented ferroelectric Pb(Zr0.52Ti0.48)O3 thin films

Influence of Phase Transition Induced by Residual Stress on Ferroelectric Properties of Highly (100)-Oriented Pb(Zr0.52Ti0.48)O3 Thin Films

Texture Evolution of Sol-Gel-Derived Pb(Zr,Ti)O-3 Film on Platinum Bottom Electrode with Different Annealing Process

Growth and ferroelectric properties of sol-gel derived Pb(Zr,Ti)O3 using inorganic zirconium precursor

Phase compositions and ferroelectric properties of Pb(Zr0.52,Ti0.48)O3 thin films with different highly orientations prepared by a sol–gel route

Effect of external mechanical stress on the domain structure of Pb(Zr0.35Ti0.65)O3 thin films

Highly (100)-Textured Pb(Zr0.52Ti0.48)O3 Film Derived from a Modified Sol–gel Technique Using Inorganic Zirconium Precursor

Development of Residual Stress in Sol-Gel Derived Pb(Zr,Ti)O-3 Films: an Experimental Study

Effectof annealing temperature onthe propertiesof PZTferroelectric thinfilms inthe processof RTPwithSol-gel method

Stress-induced shifting of the morphotropic phase boundary in sol–gel derived Pb(Zr0.5Ti0.5)O3 thin films

Effect of an in-situ applied electric field on growth of Bi4Ti3O12 films by sol–gel

Evaluation of texture in Pb(Zr0.52Ti0.48)O 3 films prepared by sol-gel route

Effect of annealing temperature on the energy storage properties of Ba(Zr0.35Ti0.65)O3 thin films prepared by sol–gel method

Effects of annealing treatment on fatigue recovery of lead zirconate titanate thin films

Evaluation of Texture in Pb(Zr<sub>0.52</sub>Ti<sub>0.48</sub>)O<sub>3</sub> Films Prepared by Sol-Gel Route

Effect of the Annealing Conditions on the Strain Responses of Lead-Free (bi0.5na0.5)tio3–bazro3 Ferroelectric Thin Films

PZT thin films with preferred-orientation induced by external stress

Effect of in situ applied electric field on the growth of La2Ti2O7 thin films by chemical solution deposition

Sol–gel derived Pb(Zr,Ti)O3 thin films: Residual stress and electrical properties