Abstract:Diffusion and segregation behavior of hydrogen and oxygen in silicon carbide subjected to H implantation and subsequent annealing were studied with a number of analytical techniques including Secondary Ion Mass Spectrometry (SIMS), Rutherford backscattering spectrometry in channeling geometry, field emission scanning electron microscopy, optical microscopy, cross-sectional transmission electron microscopy, and atomic force microscopy. H+ implantation was carried out with energies of 200 keV, 500 keV, or 1 MeV to doses of 1 × 1016, 1 × 1017, or 2 × 1017 ion/cm2, and thermal treatment was conducted in flowing argon for 1 to 2 h at temperatures of 740, 780, 1000, or 1100 °C. The process of migration and eventual loss of hydrogen in a point defect regime is postulated to proceed to a large extent through ionized vacancies. This conclusion was derived from the observed substantial difference in H mobilities in n- vs. p-type SiC as the population of ionized vacancies is governed by the Fermi-Dirac statistics, i.e., the position of the Fermi level. For higher doses, a well defined buried planar zone forms in SiC at the maximum of deposited energy, comprising numerous microvoids and platelets that are trapping sites for hydrogen atoms. At a certain temperature, a more or less complete exfoliation of the implanted layer is observed. For a 1 MeV implant heated to 1100 °C in nominally pure argon, SIMS profiling reveals a considerable oxygen peak of 1016 O atoms/cm2 situated at a depth close to that of the peak of the implanted H+. Similarly, 1100 °C annealing of a 200 keV implant induces the formation of a thin oxide (4 nm), located at the interface between the implanted layer and the substrate as evidenced by both SIMS and HRTEM. The measurements were taken on the part of the sample that remained un-exfoliated. In view of a lack of convincing evidence that a hexagonal SiC might contain substantial amounts of oxygen, further investigation is under way to elucidate its presence in the irradiation-damaged films.

Gettering of Oxygen Onto Buried Defect Layer in Hydrogen Implanted Silicon Wafers after Low Temperature Surface Saturation by Oxygen and Vacuum Annealing

Oxygen-related Vacancy-Type Defects in Ion-Implanted Silicon

Formation of Buried Insulating Island-Like SiO2 Layer in Silicon

Study Of He-Induced Nano-Cavities As Sinks Of Oxygen For Forming Silicon-On-Insulator

SEM Investigation of Surface Defects Arising at the Formation of a Buried Nitrogen-Containing Layer in Silicon

Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

Sem and Sims Study of the Buried Sixny Layer Formed in Silicon

Grown-In Defects in Heavily Boron-Doped Czochralski Silicon

Effect of Ramping Anneals under Inert or Oxidizing Ambient on the Formation of Oxygen Precipitate Denuded Zone in Nitrogen‐doped Czochralski Silicon Wafers

Enhancement of Oxygen Precipitation in Czochralski Silicon Wafers by High-Temperature Anneals

Effects of Helium and Oxygen Common Implantation in Silicon Wafer

Formation of the thermal donors in the hydrogen-implanted nitrogen-doped silicon crystal

Effects of Annealing Atmosphere on Bulk Micro-Defects in Czochralski Silicon Wafer

Buried Insulating Layer Formation in Cz Si Wafers after Helium Implantation, Nitrogen Plasma Treatment and Annealing

Formation of insulating oxygen-containing layer on the silicon wafer surface using low-temperature hydrogenation

Diffusion and impurity segregation in hydrogen-implanted silicon carbide

Oxygen Precipitation in Heavily Phosphorus-Doped Czochralski Silicon: Effect of Nitrogen Codoping

Precipitates and Defects in Silicon Co-Implanted with Helium and Oxygen

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Role of Nitrogen Related Complexes in the Formation of Defects in Silicon

Formation of the Buried Insulating Sixny Layer in the Region of Radiation Defects Created by Hydrogen Implantation in Silicon Wafer