An Anode with Aluminum Doped on Zinc Oxide Thin Films for Organic Light Emitting Devices

DH Xu,ZB Deng,Y Xu,J Xiao,CJ Liang,ZL Pei,C Sun
DOI: https://doi.org/10.1016/j.physleta.2005.07.080
IF: 2.707
2005-01-01
Physics Letters A
Abstract:Doped zinc oxides are attractive alternative materials as transparent conducting electrode because they are nontoxic and inexpensive compared with indium tin oxide (ITO). Transparent conducting aluminum-doped zinc oxide (AZO) thin films have been deposited on glass substrates by DC reactive magnetron sputtering method. Films were deposited at a substrate temperature of 150 degrees C in 0.03 Pa of oxygen pressure. The electrical and optical properties of the film with the Al-doping amount of 2 wt% in the target were investigated. For the 300-nm thick AZO film deposited using a ZnO target with an Al content of 2 wt%, the lowest electrical resistivity was 4 x 10(-4) Omega cm and the average transmission in the visible range 400-700 nm was more than 90%. The AZO film was used as an anode contact to fabricate organic light-emitting diodes. The device performance was measured and the current efficiency of 2.9 cd/A was measured at a current density of 100 mA/cm(2). (c) 2005 Elsevier B.V. All rights reserved.
What problem does this paper attempt to address?