Organic light-emitting diodes with AZO films as electrodes

Junqing Zhao,Shijie Xie,Shenghao Han,Zhiwei Yang,Lina Ye,Tianlin Yang
DOI: https://doi.org/10.1016/S0379-6779(00)00237-X
IF: 4
2000-01-01
Synthetic Metals
Abstract:Aluminum-doped zinc oxide (AZO) films were prepared by r.f. magnetron sputtering. Organic light-emitting diodes (OLEDs) with AZO/N,N'-diphenyl-N,N'-(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD)/tris(8-hydroxyquinoline)aluminum (Alq(3))/Al configuration were fabricated. The electroluminescence and current-voltage (I-V) characteristics of the devices were studied and compared with those of tin-doped indium oxide (ITO) devices fabricated under the same conditions. The stability of both AZO/Alq(3) and ITO/Alq(3) interface was investigated with X-ray photoelectric spectrum (XPS). It was found that zinc or indium would diffuse into Alq(3) layer but the diffusive extent of zinc was lower than that of indium. (C) 2000 Elsevier Science S.A. All rights reserved.
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