Aluminum-Doped Zinc Oxide Transparent Electrode Prepared by Atomic Layer Deposition for Organic Light Emitting Devices

Hui Liu,Yun-Fei Liu,Peng-Peng Xiong,Ping Chen,Hui-Ying Li,Jing-Wen Hou,Bo-Nan Kang,Yu Duan
DOI: https://doi.org/10.1109/tnano.2017.2700408
2017-01-01
IEEE Transactions on Nanotechnology
Abstract:Transparent conductive aluminum-doped zinc oxide (AZO) films are being introduced as alternatives to indium tin oxide (ITO) films, because they do not contain indium, which is expensive and toxic. In this study, the structural, electrical, and optical properties of AZO electrodes fabricated by atomic layer deposition (ALD) at a low temperature of 150 degrees C were examined by X-ray photoemission spectroscopy and scanning electron microscopy. The H2O purge time was changed in the ZnO cycle to alter the orientation of crystal phases and the film's electrical conductivity. An optimized AZO electrode, which had an Al:Zn mole ratio of 1:49, was prepared with a 20 s H2O purge time. The resulting transparent electrode had a low resistivity (1.25 m Omega.cm +/- 0.2 m Omega.cm) and a high transmittance (83.2% at 550 nm). The AZO film exhibited a high work function of 4.7 eV. Consequently, an classic organic light-emitting device (OLED) with an N, N'-bis-(1naphthl)-diphenyl-1,1'-diphenyl-4,4'-diamine and tris(8-quinolinolato) aluminum structure was fabricated on a glass substrate using the optimized AZO anode, and amaximum current efficiency of 3.9 cd/A was achieved. These results suggest that this method for preparing transparent conductive films via ALD can be used to create anodes for OLEDs.
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