Abstract:The polycrystalline silicon thin films play an important role in the field of electronics. In the paper, α-SiAl composite membranes on glass substrates was prepared by magnetron co-sputtering. The contents of Al radicals encapsulated-in the α-Si film can be adjusted by changing the Al to Si sputtering power ratios. The as-prepared α-Si films were converted into polycrystalline films by using a rapid thermal annealing (RTP) at low temperature of 350 degrees C for 10 minutes in N2 atmosphere. An X-ray diffractometer, and Raman scattering and UV-Visible-NIR Spectrometers were used to characterize the properties of the Pc-Si films. The influences of Al content on the properties of the Pc-Si films were studied. The results showed that the polycrystalline silicon films were obtained from α-SiAl composite films which were prepared by magnetron co-sputtering at a low temperature following by a rapid thermal annealing. The grain size and the degree of crystallization of the Pc-Si films increased with the increase of Al content, while the optical band gap was reduced. The nc-Si films were prepared when the Al to Si sputtering power ratio was 0.1. And a higher Crystallization rate (≥ 85%) of polycrystalline silicon films were obtained when the ratio was 0.3. The band gaps of the polycrystalline silicon films can be controlled by changing the aluminum content in the films.

Research on Preparation Processes of Low-Temperature Poly-Silicon Films

Preparation Progress on Low Temperature Polysilicon Films

Performance of Thin-Film Transistors with Ultrathin Ni-MILC Polycrystalline Silicon Channel Layers

Low Temperature Poly-Si TFT Technology

Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistors

Low-Temperature Materials And Thin Film Transistors For Flexible Electronics

A Novel Two-Step Laser Crystallization Technique for Low-Temperature Poly-Si TFTs

Low-Temperature-Processed Polycrystalline Silicon Thin-Film Transistors with Stable Solid-State Continuous-Wave Laser Crystallization

Fabrication of High Performance Low-Temperature Poly-Si Thin-Film Transistors Using A Modulated Process

Progress in the Research of Poly-Si Film for TFT Prepared by Excimer-Laser Crystallization

Low Thermal Budget Poly-Si Thin Film Transistors on Glass

Performance Improvement of Low-Temperature Polycrystalline Silicon Thin-Film Transistors with Fluorinated Silicate Glass Drive-In Masking Layer

UV Irradiation Assisted Low-Temperature Process for Thin Film Transistor Performance Improvement of Praseodymium-Doped Indium Zinc Oxide

Polycrystalline Silicon Thin Film Transistors on Corning 7059 Glass Substrates Using Short Time, Low-Temperature Processing

Low-Temperature (< 100 Degrees C) Poly-Si Thin Film Fabrication on Glass

Study on Silicon Films Prepared by Inductively Coupled Plasma CVD

A Low Temperature Polycrystalline Si TFT Technology for Large area AMLCD Drivers

Preparation of High Quality Polycrystalline Silicon Thin Films by Aluminum-Induced Crystallization

Blue Laser Diode Annealed Top-Gate Low Temperature Poly-Si TFTs With Low Resistance of Source/Drain From Deposited n + Layer

Study on the Properties of the Pc-Si Films Prepared by Magnetron Co-Sputtering at Low Temperature

Pulsed Excimer Laser Crystallization and Doping for the Fabrication of Poly-Si and -SiGe TFTs