Abstract:The phosphorus doped n-type hydrogenated microcrystalline silicon (n-μc-Si:H) thin films are prepared, at the two low substrate temperatures of room temperature and 200°C, through a low-frequency inductively coupled plasma assisted chemical vapor deposition. The effect of the substrate temperature on the structural properties of the thin films, such as the X-ray Diffraction (XRD) patterns and the Raman spectra, is studied. The XRD measurements show that the diffraction orientations of the thin films present an obvious change when the radio frequency power is increased from 1300W to 2300W. The Raman spectra of the thin films deposited at room temperature unambiguously present a phase transition from the amorphous structure to microcrystalline structure whereas no structural phase transition is observed for the thin films deposited at 200°C. The effect of the substrate temperature on the crystalline volume fraction of the thin films presents a large difference for the radio frequency power in the range of 1300W–1700W, while the difference becomes small when the power is increased from 1700W to 2300W. The deposition rate and the radio frequency power-sheet resistance curve of the thin films deposited at room temperature are obviously different from those of the thin films prepared at 200°C. It is attributed to the joint effect of the radio frequency power and substrate temperature on the doping concentration. The electron energy distribution function of the species in the chamber is mainly distributed in a low energy range.

Study on the Properties of the Pc-Si Films Prepared by Magnetron Co-Sputtering at Low Temperature

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Low-Temperature (< 100 Degrees C) Poly-Si Thin Film Fabrication on Glass

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Preparation of High Quality Polycrystalline Silicon Thin Films by Aluminum-Induced Crystallization

Low-temperature preparation of phosphorus doped μc -Si:H thin films by low-frequency inductively coupled plasma assisted chemical vapor deposition

Effects of silicon content on the structure and mechanical properties of (AlCrTaTiZr)–Si<sub><i>x</i></sub>–N coatings by reactive RF magnetron sputtering

Study on Al-induced Crystallization of Al/a-Si:H Bilayer Thin Film

Annealing Effect on Optical and Electronic Properties of Silicon Rich Amorphous Silicon-Carbide Films

Effects of deposition temperature on the mechanical and structural properties of amorphous Al-Si-O thin films prepared by RF magnetron sputtering

Preparation of Polycrystalline Silicon of 100μm Size Large Grain Thin Films by Metal Induced Crystallization

Structural and optical properties of α-Si1-xCx:H thin films prepared by RF-PECVD

Study on the properties of nanocrystalline silicon formed by aluminum-induced crystallization at low temperature

Thermoelectric effect of silicon films prepared by aluminum-induced crystallization

Effects of silicon content on the structure and mechanical properties of (AlCrTaTiZr)–Six–N coatings by reactive RF magnetron sputtering

Optimization of Material Structure of Ploy-Si Thin Film Based on Al Induced Crystallization

Impact of Alumina Coatings on Aluminum-Induced Crystallization of Polycrystalline Silicon Films

The Optoelectronic Properties of Silicon Films Deposited by Inductively Coupled Plasma CVD

Research on preparation and piezoresistive properties of poly silicon thin film

Effect of Sputtering Input Powers on Cosi2 Thin Films Prepared by Magnetron Sputtering