Abstract:The effects of annealing temperature on strain and mechanical property changes of 6H-SiC implanted with helium ions at 600K to doses of 3×1015cm−2, 1×1016cm−2 and 3×1016cm−2 and at an ion energy of 100keV were investigated by using high-resolution X-ray diffraction (XRD), nano-indentation and transmission electron microscopy (TEM). Strain increases with increasing displacements per atom (dpa). Strain relaxation in terms of changes in Δd/d exhibited a linear decrease with increasing annealing temperature ranging from 873K to 1473K for 30min in vacuum. The relaxation activation energies of the strains were estimated by Arrhenius law to be in the range of 0.4–0.7eV. Irradiation-induced hardening was observed via nano-indentation measurements as a function of annealing. The hardness of the highly damaged layer decreased monotonically with increasing annealing temperature for the samples implanted with He ions to doses of 3×1015cm−2 and 1×1016cm−2, and where no helium bubbles were formed in the damaged layer. The hardness of the damaged layer initially decreased and then increased with increasing annealing temperature from 600K to 1073K for the sample implanted He ions to a dose of 3×1016cm−2, where numerous helium bubbles were formed in the damaged layer. The TEM results suggest that the growth of helium bubbles emits interstitials upon annealing. These interstitials agglomerate into stacking faults and dislocation loops, which increase the hardness.

Annealing effects in silicon implanted with helium

The effects of the annealing time on helium implantation in Si

Study of surface morphology of helium implanted silicon

Optical Properties Revealing Annealing Behavior of High-Temperature He-Implantation Induced Defects in Silicon Carbide

Annealing Ambient on the Evolution of He-induced Voids in Silicon

Microstructural evolution upon annealing in Ar-implanted Si

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Evolution of Strain and Mechanical Properties Upon Annealing in He-implanted 6H-Sic

Implantation temperature and thermal annealing behavior in H 2 + -implanted 6H-SiC

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Insights into High-Dose Helium Implantation of Silicon

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Effects of Annealing Temperature on Buried Oxide Precipitates in He and O Co-Implanted Si

The influence of the microstructure evolution on the surface morphology in the annealing process of helium-implanted spinel

Microstructure of Hydrogen-Implanted Polycrystalline Α-Sic after Annealing

Effects of Self-Ion Implantation on the Thermal Growth of He-Induced Cavities in Silicon

Charge-sensitive deep level transient spectroscopy of helium-ion-irradiated silicon, as-irradiated and after thermal annealing

Microstructure Investigation of He+- Implanted and Post-Implantation-Annealed 4H-Sic

Annealing Effect on Optical and Electronic Properties of Silicon Rich Amorphous Silicon-Carbide Films

Microstructural and Elemental Evolution of Polycrystalline Α-Sic Irradiated with Ultra-High-fluence Helium Ions Before and after Annealing

Experimental study on the thermal evolution of silicon defects with zonal characteristics induced by precisely localized irradiation of focused helium ion beams