Abstract:We have previously developed silicon-based light-emitting devices (LEDs) with luminescent erbium (Er)-doped TiO2 (TiO2:Er) films [Yang et al., Appl. Phys. Lett. 100, 031103 (2012)]. In an LED therein, the TiO2:Er film is sandwiched between the ITO film and heavily boron-doped p-type silicon (p+-Si). In this work, we have investigated the electroluminescence (EL) from two LEDs with the TiO2:Er films annealed at 650 and 850 °C, respectively. It is revealed that between the TiO2:Er film and p+-Si, there is an intermediate silicon oxide (SiOx, x ≤ 2) layer and its thickness increases from ∼4 to 8 nm with the increase of annealing temperature from 650 to 850 °C. Interestingly, the thickness of the intermediate SiOx layer is found to exhibit a profound impact on the EL from the LED with the TiO2:Er film on p+-Si. The EL from the LED with the 650 °C-annealed TiO2:Er film is activated only under the forward bias with the positive voltage connecting to the p+-Si substrate. Such EL consists of the oxygen-vacancy-related emissions from TiO2 host and the characteristic visible and ∼1540 nm emissions from the Er3+ ions, while the EL from the LED with the 850 °C-annealed TiO2:Er film can only be enabled by the reverse bias with the negative voltage applied on the p+-Si substrate. Such EL features only the visible and ∼1540 nm emissions from the Er3+ ions. The difference in the EL behaviors of the two LEDs as mentioned above is found to be ascribed to the different electrical conduction mechanisms.

A Study of Electroluminescence in A-Si1−xcx:H and A-Si:H Devices with Various Structures

Injection Electroluminescence In Ito/A-Si-H Structure

INJECTION ELECTROLUMINESCENCE IN A-SI1-XCX-H/NIN-P STRUCTURE

Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped TiO2 Films Annealed at Different Temperatures

Bidirectional Direct-Current Electroluminescence from I-Mgxzn1−xo/n-zno/siox Double-Barrier Heterostructures on Si

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

Visible and near-infrared electroluminescence from TiO2/p+-Si heterostructured device

Luminescent and Structural Properties of Electron-Irradiated Silicon Light-Emitting Diodes with Dislocation-Related Luminescence

Visible Electroluminescence from Semitransparent Au Film/extra Thin Si-rich Silicon Oxide Film/p-Si Structure

Low-Voltage Driven Visible and Infrared Electroluminescence from Light-Emitting Device Based on Er-Doped Tio2/P(+)-Si Heterostructure

Stable Electroluminescence and Its Mechanism in Laser Crystallized A-Si:H/a-sinx:h Superlattices

Electroluminescence from Tio2/P(+)-Si Heterostructure

Room temperature visible electroluminescence from SrTiO3/p+-Si heterostructure

Electroluminescence from the Light-Emitting Devices with Erbium-Doped SrTiO3 Films on Oxidized Silicon Substrate

Electroluminescent and Carrier Transport Mechanisms of MgxZn1−xO∕Si Heterojunctions

Electroluminescence Spectra Study of Au/Si/SiO2 Superlattice/p‐si Structures with Gamma Irradiation

Visible Electroluminescence from Pulsed Laser Annealed A-Si : H/A-Sinx : H Superlattices on Silicon Wafer

Electroluminescence from Silicon-Based Single Ion Transport Light Emitting Electrochemical Cell

Electroluminescence from Si/Si Oxynitride Superlattices

Fairly pure ultraviolet electroluminescence from p-Si-based SiOx/ZnO/SiOx double-barrier device

Electroluminescence of SnO2∕p-Si heterojunction