Abstract:Measurements of the Hall coefficient and the electrical conductivity of single-crystal specimens of n-type ZnO at temperatures between 55°K and 300°K are reported. An analysis of carrier concentration vs temperature indicates that "as-grown" crystals contain more than one active donor. Crystals with low initial donor concentrations were doped with H or interstitial Zn or Li, allowing a single-donor-level analysis. Doping was accomplished by interstitial diffusion followed by a rapid quench. Each of the added donors gives rise to a hydrogen-atom-model donor center whose ionization energy is ED=0.051 ev for ND<5×1016 cm-3. Lithium was also found to introduce a small concentration of acceptors, presumably due to an exchange between interstitial and substitutional positions. The quantity (m(N)m)32D-1, where m(N)=density-of-states'' effective mass and D=donor degeneracy , was found to be about 0.19 for all three donors, indicating that if D=2 then m(N)=0.5. The low-frequency dielectric constant of ZnO was redetermined as κ=8.5. The effective mass associated with the electron found in a hydrogen-like orbit is then m(H)=0.27m, and the observed decrease of ED with increasing ND corresponds to the overlap of these large orbits. The Hall mobility is 180 cm2 volt-1 sec-1 at 300°K and increases with decreasing temperature. It has been analyzed for lattice and impurity scattering. The optical-mode scattering mobility has been calculated from both the perturbation and intermediate-coupling theories making use of the effective mass, m(H), so that no adjustable parameters were included. The two theories agree for ZnO since it turns out to have a polar-mode electron coupling constant of α=1. The mobility so obtained is in good agreement with experiment and indicates that optical-mode scattering is important above 200°K. Some acoustical-mode scattering also appears to be present. At low temperatures the mobility appears to be limited by impurity scattering.

Dielectric Relaxation Of Shallow Donor In Polycrystalline Mn-Doped Zno

Dielectric Relaxation and Strain Behavior of 95.5% Pb(Zn1/3Nb2/3)O3–4.5% PbTiO3 Single Crystals at Cryogenic Temperatures

Revisiting The Low-Temperature Dielectric Properties Of Zno

Characterization of Intrinsic Donor Defects in Zno Ceramics by Dielectric Spectroscopy

Role Of Defects In Determining The Electrical Properties Of Zno Ceramics

Shallow Donor Ionization Energy in Sn-Doped ZnO Nanobelts

Intrinsic and Extrinsic Defect Relaxation Behavior of Zno Ceramics

Physical Meaning of Conductivity Spectra for Zno Ceramics

Dielectric Relaxation in 91%pb(zn1∕3nb2∕3)o3–9%pbtio3 Single Crystal at Low Temperature

Characterization of dielectric behavior in ZnO electroceramic: Superior grain boundary, inferior grain boundary and grain

Electronic Relaxation of Deep Bulk Trap and Interface State in Zno Ceramics

Investigation Of Dimensional Effect In Zno Ceramics Through High-Temperature Relaxation

Hopping Conduction In Mn-Doped Zno

Understanding Of Dc Degradation Of Zno Varistor Ceramics From The Aspect Of High-Temperature Relaxation

Dielectric Spectroscopy Studies of ZnO Single Crystal

Polaronic Relaxation in La0.8bi0.2fe0.7mn0.3o3

The AC Impedance and Variable Temperature Dielectric Spectroscopic Analysis of MnO2 Doped and Un-Doped ZnO–V2O5 Ceramics

Relaxor- and Phase-Transition-like Behaviors in ZnO Single Crystals at High Temperatures

Dielectric properties of Mn-doped ZnO-Bi 2 O 3 varistors below liquid nitrogen temperature

Carrier Concentration Dependence Of Acceptor Activation Energy In P-Type Zno

Hall Effect Studies of Doped Zinc Oxide Single Crystals