Tweaks to intrinsic point defects in ZnO ceramics via MnCO 3 and their effect on electrical properties
Xin Wang,Xia Zhao,Men Guo,Haibin Shen,Boyu Zhang,Xuebin Lyu,Zixin Guo
DOI: https://doi.org/10.1016/j.ceramint.2023.11.282
IF: 5.532
2023-12-21
Ceramics International
Abstract:Transition metal elements are necessary dopants in ZnO ceramics to improve electrical properties by defects engineering. In the present study, the tweaking effect of MnCO 3 on the intrinsic point defects , i.e., the zinc interstitial and the oxygen vacancy , are investigated to optimize electrical properties of ZnO ceramics. After analyzing microstructure and dielectric response, it was found that Mn 2+ was further oxidized to Mn 4+ during sintering and Mn 4+ solved into ZnO grains and inhibited the formation of the intrinsic point defects. On the other hand, due to the increase of the interface states contributed by Mn separation at grain boundaries, the barrier width broadened to keep charge neutrality. As a result, although the barrier height decreased from 0.68 eV to 0.54 eV as MnCO 3 content increased from 0 mol% to 0.63 mol%, the nonlinear electrical properties were enhanced, that is, the breakdown field increased from 188.47 V/mm to 234.82 V/mm, the nonlinear coefficient increased from 12.87 to 74.76, and the leakage current density decreased from 22.08 μA/cm 2 to 0.04 μA/cm 2 . Combined with the stability during DC aging tests, it is suggested that the optimal content of MnCO 3 is 0.38 mol%. The study also indicates that the barrier width is a sensitive parameter in optimizing electrical properties of ZnO ceramics, instead of the sole focus on higher barrier height.
materials science, ceramics