Abstract:The growing interest in the use of near-infrared (NIR) radiation for spectroscopy, optical communication, and medical applications spanning both NIR-I (700-900 nm) and NIR-II (900-1700 nm) has driven the need for new NIR light sources. NIR phosphor-converted light-emitting diodes (pc-LEDs) are expected to replace traditional lamps mainly due to their high efficiency and compact design. Broadband NIR phosphors activated by Cr3+ and Cr4+ have attracted significant research interest, offering emission across a wide range from 700 to 1700 nm. In this work, we synthesized a series of Sc2(1-x)Ga2xO3:Cr3+/4+ materials (x = 0-0.2) with broadband NIR-I (Cr3+) and NIR-II (Cr4+) emission. We observed a substantial increase in the intensity of Cr3+ (approximately 77 times) by incorporating Ga3+ ions. Additionally, our investigation revealed that energy transfer occurred between Cr3+ and Cr4+ ions. Configuration diagrams are presented to elucidate the behavior of Cr3+ and Cr4+ ions within the Sc2O3 matrix. We also observed a phase transition at a pressure of 20.2 GPa, resulting in a new unknown phase where Cr3+ luminescence exhibited a high-symmetry environment. Notably, this study presents the pressure-induced shift of NIR Cr4+ luminescence in Sc2(1-x)Ga2xO3:Cr3+/4+. The linear shifts were estimated at 83 ± 3 and 61 ± 6 cm-1/GPa before and after the phase transition. Overall, our findings shed light on the synthesis, luminescent properties, temperature, and high-pressure behavior within the Sc2(1-x)Ga2xO3:Cr3+/4+ materials. This research contributes to the understanding and potential applications of these materials in the development of efficient NIR light sources and other optical devices.

Photo-EPR Study of Gamma and Neutron Irradiated SI GaAs:Cr

EPR study of gamma-ray irradiated semi-insulated GaAs:Cr

The Fermi level effect on the luminescence from GaAs: Cr materials

Electronic structure of Ga$_{1-x}$Cr$_{x}$N and Si-doping effects studied by photoemission and X-ray absorption spectroscopy

Study of Irradiation Induced Changes of Electrical and Functional Characteristics in Ge Doped Si Diodes

Photoelectric Studies as the Key to Understanding the Nonradiative Processes in Chromium Activated NIR Materials

Nanocrystalline Si Studied by Beam-Based Positron Annihilation Spectroscopy

Effect of Gamma Exposure on Chalcogenide Glass Films for Microphotonic Devices

Impact of electron irradiation on semi-insulating and conductive β-Ga 2 O 3 single crystals

Radiation hardness of GaAs: Cr and Si sensors irradiated by electron beam

EPR investigation of defects in Bi12GeO20:Cr single crystal irradiated by high energy uranium ions

Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Chromium in silicon carbide: electron paramagnetic resonance studies

The study on photoreflectance characteristic of semi-insulating GaAs surface region by its exposure to 6 MeV electron beam

Micro-Raman and Photoluminescence Studies of Neutron-Irradiated Gallium Nitride Epilayers

Gamma-Ray Irradiation Effects on Electroluminescence from Au/Extra Thin Si-Rich SiO2 Film/p-Si Structures

Relationship of Single Crystal Growth and Luminescence Properties of Cr-doped Gadolinium Gallium Garnet Crystals for Radiation Dose-Rate Monitoring Systems

Optical absorption spectra of Cr3+ and Cr4+ in Sr3Ga2Ge4O14 garnet crystals

Nonradiative quenching of EPR signals in germanium-doped AlGaN: evidence for DX-center formation

Advancing Near-Infrared Light Sources: Enhancing Chromium Emission through Cation Substitution in Ultra-Broadband Near-Infrared Phosphors

Ar+ irradiation of Si nanocrystal-doped SiO2: Evolution of photoluminescence