Abstract:Synchrotron white beam x-ray topography images show that faint needle-like surface morphological features observed on the Si-face of 4H-SiC homoepitaxial layers using Nomarski optical microscopy are associated with V-shaped stacking faults in the epilayer. KOH etching of the V-shaped defects reveals small oval pits connected by a shallow trench which correspond to the surface intersections of two partial dislocations and the stacking fault connecting them. Transmission electron microscopy (TEM) specimens from regions containing the V-shaped defects prepared using focused ion beam milling show stacking sequences of (85), (50) and (63) at the faulted region using high resolution TEM. In order to study the formation mechanism of the V-shaped defects, low dislocation density 4H-SiC substrates were chosen for epitaxial growth, and the corresponding regions before and after epitaxy growth are compared in SWBXT images. It is found that no defects in the substrate are directly associated with the formation of the V-shaped defects. Simulation results of the contrast from the two partial dislocations associated with V-shaped defects in synchrotron monochromatic beam x-ray topography reveals the opposite sign nature of their Burgers vectors. Therefore, a mechanism of 2D nucleation during epitaxy growth is postulated for the formation of the V-shaped defects, which requires elimination of non-sequential c/4[0001] bilayers from the original structure to create the observed faulted stacking sequence.

HREM observation of defects in VPE GaAs epilayer on Si (111) substrate

Study of the Defects in GaN Epitaxial Films Grown on Sapphire by HVPE

Study of Monocrystalline Structure of GaAs/Si Grown by VPE

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Investigation of Defect Formation in InGaAs on GaP/Si (100) Substrates

Study of Si and Ge growth on Si(100) surface

Structural characterization of low temperature epi-silicon grown on {100} and {111} Si substrates using ultrahigh resolution cross-sectional TEM

Defects Induced by P+-Implanted in Silicon

TEM Study of the Structure of GaAs on Vicinal Si (001) Surface Grown by MBE

Electron microscopy analysis of GaN/GaAs cubic heterostructure grown by MBE

Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers

Hrem Examination of Er Ion-Implanted in Si

The Research on Growth of GaAs under the Monitoring of RHEED

Emission from Defects in Thin Gan Epilayers Grown on Vicinal 4H-Sic Substrates

Evaluation of stacking faults and associated partial dislocations in AlSb/GaAs (001) interface by aberration-corrected high-resolution transmission electron microscopy

Reflection electron imaging of semiconductor multilayer materials

Study of Si1-xGEx epitaxy growth on Si(100) and Si(111)

Microstructures Of Gan Films Laterally Overgrown On Si(111) By Hydride Vapour Phase Epitaxy

Strain Distribution Across HVPE GaN Layer Grown on Large Square-Patterned Template Studied by Micro-Raman Scattering

Origin of Microstructural Defects in Single-Crystalline Films Van Der Waals Epitaxy on Graphene

A REM study of inhomogeneous stress fields induced by the interfacial steps at In0.2Ga0.8As/GaAs interface