Abstract:Pb(Zr,Ti)O-3 (PZT) is a well known ferroelectric material for nonvolatile memory applications. However, interfacial diffusion and reaction are the main issues when PZT films were deposited directly on silicon. One way to overcome this obstacle is to deposit a barrier layer between PZT and Si. In this work, Pt/PbZr0.53Ti0.47O3/LaAlO3/Si structure has been fabricated to study the electric properties. PbZr0.53Ti0.47O3 films with 300 nm thickness and LaAlO3 buffer layers with 30 nm thickness were prepared by pulsed laser deposition technique on n-type Si (100) substrates at 650 degreesC and 450 degreesC, respectively. X-ray diffraction shows that polycrystalline PbZr0.53Ti0.47O3 film was formed on amorphous LaAlO3 buffer layer. The Auger electron spectrometer demonstrates that LaAlO3 buffer layer effectively prevent Si and Ti, Ph interdiffusion between PZT and Si substrates. For the Pt/PbZr0.53Ti0.47O3/LaAlO3/Si Structure, the current density-voltage measurement showed a typical leakage current density of about 10(-7) A/cm(2) at 8 V applied voltage. Furthermore, it has been measured that the Pt/PbZr0.53Ti0.47O3/LaAlO3/Si heterostructures exhibit ferroelectric switching properties, showing a memory window as large as 2 V under a ramp rate of 200 mV/s at I MHz.

Characteristics of Pb(Zr0.53ti0.47)O-3 on Metal and Al2o3/Si Substrates

Electric Properties of Pt/PbZr 0.53 Ti 0.47 O 3 /laalo 3 /si Structure

Electrical properties of Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thin films on TiO2 buffer layer

Microstructure and Electrical Properties of Ferroelectric Pb(Zr0.53Ti0.47)O3films on Si with TiO2buffer Layers

Dielectric and Ferroelectric Properties of Ba(Zr0.35Ti0.65)O3 Thin Films Grown by a Sol-Gel Process

Properties of PbZr<sub>x</sub>Ti<sub>1−x</sub>O<sub>3</sub>/CeO<sub>2</sub>/SiO<sub>2</sub>/Si structure

Epitaxial Pb(Zr,Ti)O3 Capacitors on Si by Liquid Delivery Metalorganic Chemical Vapor Deposition

The structural and electrical properties of Al/Pb(Zr0.52Ti 0.48)O3/Al2O3/Si with an Al 2O3 layer prepared by using the molecular atomic deposition method

Characteristics of Pb(Zr0.52Ti0.48)O3 Thin Films on p-Si with a Buffer Layer of Bi4Ti3O12 Prepared by Pulsed Laser Deposition

Studies on Al-Doped Zno Thin-Film Transistors with Pb(Zr0.3ti0.7)O-3 Gate Insulator

Characteristics of Metal-Pb(Zr0.53Ti0.47)O3-TiO2-Si capacitor for nonvolatile memory applications.

Structural and Electrical Characteristics of Pb(Zr-0.53,Ti-0.47)O-3 Thin Films Deposited on Si(100) Substrates

Structural and electrical characteristics of Pb(Zr 0.53,Ti 0.47)O 2 thin films deposited on Si (100) substrates

C–V Characteristics of Pt/PbZr0.53Ti0.47O3/LaAlO3/Si and Pt/PbZr0.53Ti0.47O3/La0.85Sr0.15CoO3/LaAlO3/Si Structures for Ferroelectric Gate FET Memory

Formation and Characteristics of Pb(Zr,Ti)O3 Field-Effect Transistor with a SiO2 Buffer Layer

Characterization of Au/Pb(Zr 0.96 Ti 0.04 )O 3 /al 2 O 3 /si Antiferroelectric Field-Effect Transistors for Memory Application

Mos Capacitance Properties of Silicon-Based Pzt Thin Films

Fabrication and characteristics of Pb(Zr,Ti)O3 ferroelectric field-effect transistor

Atomic Layer Deposition Of Pb(Zr,Ti)O-X On 4h-Sic For Metal-Ferroelectric-Insulator-Semiconductor Diodes

Structure and electrical properties of Pb(Zr<sub>0.25</sub>Ti<sub>0.75</sub>)O<sub>3</sub> thin films on LaNiO<sub>3</sub>—Coated thermally oxidized Si substrates