Local scalable description of global characteristics of various on-chip asymmetrically octagonal inductors

Wen-Yan Yin,S. J. Pan,Le-Wei Li,Yeow-Beng Gan,Fujiang Lin
DOI: https://doi.org/10.1109/TMAG.2003.814292
2003-01-01
Abstract:We present a parametric investigation of various groups of on-chip asymmetrically octagonal inductors on silicon substrates. The inductors have different numbers of turns, strip widths, spacings, outer dimensions, and inner radii. Using two-port S parameters measured by a deembedding technique, we derive some local scalable formulas for extrapolating Q factor, resonance frequency, inductance, overlapping, and oxide capacitances of these octagonal inductors with different geometries. The effects of all geometric parameters on Q factor and so forth are explored, analyzed, and compared with each other in detail.
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