Structure and Ultrafast Carrier Dynamics in N-Type Transparent Mo : Zno Nanocrystalline Thin Films

Jielong Shi,Hong Ma,Guohong Ma,Hongliang Ma,Jie Shen

DOI: https://doi.org/10.1007/s00339-008-4529-8

2008-01-01

Applied Physics A

Abstract:High quality ZnO and Mo-doped ZnO thin films were fabricated with a dc sputtering method, and XRD and Raman characterizations reveal that Mo atoms were successfully incorporated into ZnO lattice to form a n-type semiconductor. Two-color femtosecond pump and probe results indicate that charge carriers relaxation in pure ZnO film shows biexponential decay processes with an ultrafast component of about 1 ps and slow component of about 135 ps. For Mo-doped ZnO films, the charge carriers relaxation shows three exponential decay processes with an ultrafast part of 1 ps, fast part of about 10 ps and slow part of 135 ps. The 10 ps fast component relaxation process originates from the Mo-formation defects.