Abstract:Zinc telluride, due to its direct band gap and broadband light absorption, has the good application prospects in terahertz devices, solar cells, waveguide devices, and green light emitting diodes. In the photovoltaic field, it is possible to further improve the photoelectron conversion efficiency of multi-junction tandem solar cells by combining zinc telluride with III-V semiconductors. Ultrafast photo-excited carrier dynamics is fundamental to understand photoelectron conversion process of nanofilm solar cells. In this study, the ultrafast energy carrier dynamics of N-doped polycrystalline zinc telluride is investigated by using the femtosecond laser two-color pump-probe method at room temperature. The polycrystalline zinc telluride nanofilm is grown on a 500 μm GaAs (001) substrate via molecular beam epitaxy and doped by using a nitrogen ratio frequency plasma cell. The laser pulses with a central wavelength of 800 nm are divided into pump beam and probe beam by a beam splitter, after which the pump beam passes through a bismuth triborate crystal and its frequency is doubled to 400 nm. The 400 nm pump beam and 800 nm probe beam are focused on the sample collinearly through the same objective lens. Photo-excited carriers will be generated since the excitation photon energy of 400 nm pump beam (3.1 eV) is higher than the band gap of zinc telluride (～ 2.39 eV). The experimental data are analyzed by using the theoretical fitting model which includes energy relaxation processes of electrons and lattice, and the theoretical curves are consistent well with the experimental data. The fitted results show that the three dominated relaxation processes which affect the initial reflectivity recovery are in sub-picosecond time regime. The positive amplitude electron relaxation process is attributed to inter-band carrier cooling and carrier diffusion through electron-photon interactions, and the deduced decay time of this positive amplitude electron relaxation process is about 0.75 ps. The negative amplitude electron relaxation process is characterized as a photo-generated carrier trapping process induced by defects, and the decay time of this process is about 0.61 ps. The lattice heating process is realized through electron-phonon coupling process, and the calculated time constant of the lattice heating is about 0.86 ps.

Ultrafast Carrier Dynamics of Aluminum-Doped Silicon Film Irradiated by Femtosecond Laser Pulse

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Femtosecond-Laser-Ablation Dynamics in Silicon Revealed by Transient Reflectivity Change

Impact of aluminum doping on nonlinear absorption and ultrafast carriers dynamics of Al:CdO thin films

Ultrafast Carrier Dynamics and Third Order Nonlinear Optical Properties of Aluminum Doped Zinc Oxide (AZO) Thin Films

Atomic-Level Modeling of A Silicon Nanofilm Irradiated by Ultrashort-Pulsed Laser Bursts

Modelling ultrafast non-equilibrium carrier dynamics and relaxation processes upon irradiation of hexagonal Silicon-Carbide with femtosecond laser pulses

Ultrafast Dynamics of MnSi1.7 Film Studied by Pump–probe Technique

Ultrafast optical nanoscopy of carrier dynamics in silicon nanowires

Investigation of transient surface electric field induced by femtosecond laser irradiation of aluminum

Ultrafast Relaxation Character of Nonequilibrium Carriers in GaAs Excited by Femtosecond Laser

The influence of ultrafast temporal energy regulation on the morphology of Si surfaces through femtosecond double pulse laser irradiation

Ultrafast Laser-Induced Elastodynamics in Single Crystalline Silicon Part I: Model Formulation

Ultrafast Dynamics, Optical Nonlinearities, and Chemical Sensing Application of Free-Standing Porous Silicon-Based Optical Microcavities

Irradiation Effect on Ag-Dispersed Amorphous Silicon Thin Films by Femtosecond Laser

Experimental Study of Ultrafast Carrier Dynamics in Polycrystalline ZnTe Nanofilm

Ultrafast Dynamics Property of GaAs Carrier

Ultrafast Carrier Dynamics In Polycrystalline Bismuth Telluride Nanofilm

Photoluminescence of Monocrystalline Silicon Irradiated by Femtosecond Pulsed Laser

Ultrafast Dynamics of Thin-Film Aluminum Observed by Ultrafast Electron Diffraction

Ultrafast thermalization dynamics in silicon wafer excited by femtosecond laser double-pulse vortex beam