Abstract:By solving the Schrdinger and Poisson equations self-consistently, the central barrier height, central barrier width, well width, and doping concentration in the barriers of symmetric Al_ 0.75 Ga_ 0.25 N/GaN double quantum wells (DQWs) have been studied to investigate their influences on the wavelength and absorption coefficient of intersubband transitions (ISBTs). A smaller wavelength of the ISBT between the first odd and the second even order subbands (S_ 1odd -S_ 2even ISBT) in Al_ 0.75 Ga_ 0.25 N/GaN DQWs and a larger absorption coefficient of the S_ 1odd -S_ 2even ISBT were obtained with decreased central barrier height, when the central barrier height was larger than 0.62 eV. The wavelength of the S_ 1odd -S_ 2even ISBT decreases, and the absorption coefficient of the S_ 1odd -S_ 2even ISBT increases, when the width of the central barrier is reduced. On the other hand, decreasing the width of the well will result in smaller wavelength of the S_ 1odd -S_ 2even ISBT and larger absorption coefficient of the S_ 1odd -S_ 2even ISBT when the width of the well is narrower than 1.9 nm. When doping concentration in the barriers is smaller than 10~ 18 /cm~3, the wavelength of the S_ 1odd -S_ 2even ISBT is unchanged, while the absorption coefficient of the S_ 1odd -S_ 2even ISBT increases with the doping concentration. These results provide useful guidance for realization of ultrafast two-color optoelectronic devices operating in the optical communication wavelength range.

Three-Energy-Level System in Asymmetric Alxga1-Xn/Gan Double Quantum Wells

Intersubband Transitions In Asymmetric Alxga1-Xn/Gan Double Quantum Wells

Near-Infrared Two-Color Intersubband Transitions in Aln/Gan Coupled Double Quantum Wells

Intersubband Transition in Symmetric AlxGa1 − Xn/gan Double Quantum Wells with Applied Electric Field

Double-Resonance Enhanced Intersubband Second-Order Nonlinear Optical Susceptibilities in Gan/Algan Step Quantum Wells

Influence Of Width Of Left Well On Intersubband Transitions In Alxga1-Xn/Gan Double Quantum Wells

Anticrossing Gap Between Pairs Of The Subbands In Alxga1-Xn/Gan Double Quantum Wells

Influence Of Polarization-Induced Electric Field On The Wavelength And The Absorption Coefficient Of The Intersubband Transitions In Alxga1-Xn/Gan Double Quantum Wells

Influence of Applied Electric Field on the Absorption Coefficient and Subband Distances in Asymmetrical AlN/GaN Coupled Double Quantum Wells

Influence of structure and doping concentration of AlxGa1-xN/GaN double quantum wells on wavelength and absorption coefficient of intersubband transitions

Intersubband Transition in AlGaN/GaN Step Quantum Wells at 3–5 Μm

Intersubband transitions in Al0.82In0.18N/GaN single quantum well

Anticrossing Gap between Pairs of the Subbands in Al <sub> <i>x</i> </sub> Ga <sub> 1− <i>x</i> </sub> N/GaN Double Quantum Wells

Influence Of Polarization-Induced Electric Field On Subband Structure In A1(Chi)Ga(1-Chi)N/Gan Double Quantum Wells

Influence of Polarization-Induced Electric Field on Subband Structure and Electron Distribution in Al/sub X/ga/sub 1-X/n/gan Double Quantum Wells

Suppression of Intersubband Transition by Applied Electrical Fields in AlN/GaN Coupled Double Quantum Wells

Multisubband Transport Of The Two-Dimensional Electron Gas In Alxga1-Xn/Gan Heterostructures

Intersubband optical absorption of electrons in double parabolic quantum wells of Al x Ga 1− x As/Al y Ga 1− y As

Influence of Polarization Induced Electric Fields on the Wavelength and the Refractive Index of Intersubband Transitions in AlN/GaN Coupled Double Quantum Wells

Optical Transitions In Ganas/Gaas Single Quantum Well

Occupation of the Double Subbands by the Two-Dimensional Electron Gas in the Triangular Quantum Well at Al X Ga 1 − X N / G a N Heterostructures