Optically induced defects in vitreous silica

saulius juodkazis,makoto watanabe,h b sun,s matsuo,junji nishii,hiroaki misawa
DOI: https://doi.org/10.1016/S0169-4332(99)00430-4
IF: 6.7
2000-01-01
Applied Surface Science
Abstract:We report the observation of photoluminescence (PL) in optically damaged vitreous silica (v-SiO2) and its gradual decrease by annealing at temperature range from room temperature to 773 K. Optical damage was induced by tightly focused picosecond or femtosecond irradiation inside v-SiO2. FL bands at 280, 470 and 650 nm were observed. The PL can be excited by 250 nm irradiation, which corresponds to the absorption band of the oxygen vacancy, V-O. The decrease of PL with annealing is explained by structural modifications of the defects in the damaged area. (C) 2000 Elsevier Science B.V. All rights reserved.
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