First-principles study of adsorption and diffusion on Ge/Si(0 0 1)-(2 · 8) and Ge/Si(1 0 5)-(1 · 2) surfaces

Li Huang,Guang-Hong Lu,Feng Liu,X. G. Gong

2007-01-01

Abstract:Abstract

What problem does this paper attempt to address?

First-principles Study of Adsorption and Diffusion on Ge/Si(001)-(2×8) and Ge/Si(105)-(1×2) Surfaces

Li Huang,Guilong Lu,Feng Liu,X. G. Gong

DOI: https://doi.org/10.1016/j.susc.2007.05.021

IF: 1.9

2007-01-01

Surface Science

Abstract:Using first-principles total-energy calculations, we have investigated the adsorption and diffusion of Si and Ge adatoms on Ge/Si(0 0 1)-(2 × 8) and Ge/Si(1 0 5)-(1 × 2) surfaces. The dimer vacancy lines on Ge/Si(0 0 1)-(2 × 8) and the alternate SA and rebonded SB steps on Ge/Si(1 0 5)-(1 × 2) are found to strongly influence the adatom kinetics. On Ge/Si(0 0 1)-(2 × 8) surface, the fast diffusion path is found to be along the dimer vacancy line (DVL), reversing the diffusion anisotropy on Si(0 0 1). Also, there exists a repulsion between the adatom and the DVL, which is expected to increase the adatom density and hence island nucleation rate in between the DVLs. On Ge/Si(1 0 5)-(1 × 2) surface, the overall diffusion barrier of Si(Ge) along (5¯01) direction is relative fast with a barrier of ∼0.83(0.61) eV, despite of the large surface undulation. This indicates that the adatoms can rapidly diffuse up and down the (1 0 5)-faceted Ge hut island. The diffusion is also almost isotropic along [0 1 0] and [5¯01] directions.
The Study of Ag Adsorbed on Ge(111) 2×1 Surfaces Using First-Principles Calculations

Y. Zhu,S. H. Zhang,X. Y. Zhang,S. L. Zhang,A. M. Hao,H. Y. Jin,R. P. Liu

DOI: https://doi.org/10.1016/j.physb.2010.08.034

2010-01-01

Abstract:The surface structures and electronic properties of two proposed Ge(111) 2×1 reconstruction surfaces and the Ge(111) 2×1–Ag chemisorption systems at 0.5 and 1.0ML (monolayer) coverage are studied using first-principles calculations. The adsorption energy, work function, energy band, and density of states are calculated to distinguish the two models from each other. The calculated structures and electronic properties of the clean surface agree well with previous experimental and theoretical results. In the case of 0.5ML coverage, the systems show metallic properties. There is a great contrast between the two optimized structures. Their electronic properties are also different. The 1ML coverage systems show semiconductor-like properties. The electronic properties are quite similar for the two models, although their optimized geometries present slight differences.
Adsorption, Diffusion, And Site Exchange For Ge Ad-Dimers On Sb-Covered Si(001) From First-Principles Total-Energy Calculations

En-Zuo Liu,Chong-Yu Wang,Jian-Tao Wang

DOI: https://doi.org/10.1103/PhysRevB.74.075303

IF: 3.7

2006-01-01

Physical Review B

Abstract:The adsorption and diffusion of Ge adatoms and ad-dimers on the one-monolayer Sb-covered Si(001) surface are studied using first-principles total-energy calculations. It is shown that Ge adatoms and ad-dimers can both break Sb dimers because of the weak bonding of the Sb dimers on Si(001). As a result, the most stable sites are both on the Sb dimer rows for Ge adatoms and ad-dimers, which is in significant contrast to the conventional picture that the most stable site for a Ge ad-dimer is in the trough between the group-V element dimer rows. We have also examined the energetics of the site exchange between Ge and Sb atoms for the surfactant-mediated growth and find that Ge ad-dimers tend to exchange with the subsurface Sb atoms one by one perpendicular to the surface dimer rows.
Adsorption and diffusion of adatoms on Ru(0001): A first-principles study

Yunhao Lu,Q. Sun,Yu Jia,P. He

DOI: https://doi.org/10.1016/j.susc.2008.05.043

IF: 1.9

2008-01-01

Surface Science

Abstract:Using first-principles total energy calculations within density functional theory, we investigated adsorption and diffusion of various elements (S, Ge, Pd, Ag and Pt) on the Ru(0001) surface. It was found that the hcp hollow site is the preferred adsorption site for all atoms considered (S, Ge, Pd and Pt) except Ag which has equal probability to be adsorbed at the hcp hollow site, fcc hollow site, and the bridge site. Furthermore, S and Ge addlayers become unstable when the coverage goes beyond 0.25 monolayer (ML) due to the repulsive interaction between adsorbates. In contrary, the binding energies of the metal adsorbates Pd, Ag and Pt increase with coverage, all the way up to full coverage (1ML). The diffusion barriers of the five adsorbates on Ru(0001) are investigated and their relationships with the covalent radii of the adsorbates are discussed.
Study of Si and Ge growth on Si(100) surface

Lei Wang,JingChang Tang,Deren Yang,Xuesen Wang,Yanfang Hu

2002-01-01

Abstract:Utilizing scanning tunneling microscope and UHV system, the growth of Si and Ge on Si(100) surface have been investigated. The morphological and structural properties of the surfaces are studies. A nano-patterned Si film can be produced by homoepitaxy on Si(100). The growth of Ge on Si(100) will form regular 3D islands. On the multilayer film of Si/Ge/Si(100), the Ge will form regular small and big is lands. The big islands are probably stabilized by a Ge/Si/Ge shell structure.
Adsorption and diffusion of adatoms on Ru(0 0 0 1): A first-principles study

Yunhao Lu,Q. Sun,Yu Jia,P. He

DOI: https://doi.org/10.1016/j.susc.2008.05.043

IF: 1.9

2008-01-01

Surface Science

Abstract:Using first-principles total energy calculations within density functional theory, we investigated adsorption and diffusion of various elements (S, Ge, Pd, Ag and Pt) on the Ru(0001) surface. It was found that the hcp hollow site is the preferred adsorption site for all atoms considered (S, Ge, Pd and Pt) except Ag which has equal probability to be adsorbed at the hcp hollow site, fcc hollow site, and the bridge site. Furthermore, S and Ge addlayers become unstable when the coverage goes beyond 0.25 monolayer (ML) due to the repulsive interaction between adsorbates. In contrary, the binding energies of the metal adsorbates Pd, Ag and Pt increase with coverage, all the way up to full coverage (1ML). The diffusion barriers of the five adsorbates on Ru(0001) are investigated and their relationships with the covalent radii of the adsorbates are discussed.
Gas Adsorption Investigation on SiGe Monolayer: A First-Principle Calculation

Xiang Sun,Yuzheng Guo,Yan Zhao,Sheng Liu,Hui Li

DOI: https://doi.org/10.3390/s20102879

IF: 3.9

2020-05-19

Sensors

Abstract:The gas adsorption behaviors of CO, CO2, SO2, NO2, NO, NH3, H2, H2O, and O2 on SiGe monolayer are studied using the first-principles calculation method. Three special adsorption sites and different gas molecule orientations are considered. Based on adsorption energy, band gap, charge transfer, and the electron localization function, the appropriate physical adsorptions of SO2, NO, NH3, and O2 are confirmed. These gases possess excellent adsorption properties that demonstrate the obvious sensitiveness of SiGe monolayer to these gases. Moreover, SiGe may be used as a sensing material for some of them. NO2 adsorption in different adsorption sites can be identified as chemical adsorption. Besides, the external electric field can effectively modify the adsorption strength. The range of 0 ~ − 2 V/nm can create a desorption effect when NH3 adsorbs at the Ge site. The NH3 adsorption models on Ge site are chosen to investigate the properties of the I-V curve. Our theoretical results indicate that SiGe monolayer is a promising candidate for gas sensing applications.

engineering, electrical & electronic,chemistry, analytical,instruments & instrumentation
First-Principles Study of Metal Atoms Adsorbed on Sio2 Surface

Yao Hong-Ying,Gu Xiao,Ji Min,Zhang Di-Er,Gong Xin-Gao

DOI: https://doi.org/10.7498/aps.55.6042

IF: 0.906

2006-01-01

Acta Physica Sinica

Abstract:The adsorption properties of metal atoms on the hydroxyl SiO2 surface have been studied by using first-principles calculation. It is found that In and Ga atoms are weekly bound to the surface, while Fe, Co and Ni atoms. are bound to both Si and O atoms with strong chemical bonds. Potential energy surface and diffusion barrier calculations show that In (Ga) can easily diffuse on the surface because of a rather small diffusion barrier(0.1-0.3 eV). The obtained results are in close agreement with recent nano-synthesis experimental results.
First principles study of the adsorption of C60 on Si(111)

Daniel Sanchez-Portal,Emilio Artacho,J. I. Pascual,J. Gomez-Herrero,Richard M. Martin,Jose M. Soler

DOI: https://doi.org/10.1016/S0039-6028%2800%2901008-6

2000-11-01

Abstract:The adsorption of C60 on Si(111) has been studied by means of first-principles density functional calculations. A 2x2 adatom surface reconstruction was used to simulate the terraces of the 7x7 reconstruction. The structure of several possible adsorption configurations was optimized using the ab initio atomic forces, finding good candidates for two different adsorption states observed experimentally. While the C60 molecule remains closely spherical, the silicon substrate appears quite soft, especially the adatoms, which move substantially to form extra C-Si bonds, at the expense of breaking Si-Si bonds. The structural relaxation has a much larger effect on the adsorption energies, which strongly depend on the adsorption configuration, than on the charge transfer.

Materials Science
Strain Effect on Adatom Binding and Diffusion in Homo- and Heteroepitaxies of Si and Ge on ( 001) Surfaces.

L Huang,F Liu,XG Gong

DOI: https://doi.org/10.1103/physrevb.70.155320

IF: 3.7

2004-01-01

Physical Review B

Abstract:Strain dependence of adatom binding energies and diffusion barriers in homo- and heteroepitaxies of Si and Ge on (001) surface has been studied using first-principles calculations. In general, Si adatom binding energies and diffusion barriers are larger on Si(001) and Ge(001) surfaces than a Ge adatom, in accordance with decreasing bond strength from Si-Si to Si-Ge and to a Ge-Ge bond. The overall surface diffusion anisotropy of Si and Ge adatoms is found to be comparable on both Si(001) and Ge(001). The essentially linear dependence of binding energies and diffusion barriers on external strain is reproduced in all the cases, giving strong evidence for a priori quantitative prediction of the effect of external strain on adatom binding and surface diffusion.
A First-Principles Investigation into the Adsorption Behavior and Deposition Mechanism of Boron-Containing Gases on Si(100) Surfaces During Chemical Vapor Deposition

Shigang Xu,Zhihong Li,Zhifeng Nie,Hongxing He,Enrui Dai,Yi Zhang,Gang Xie

DOI: https://doi.org/10.1016/j.mtcomm.2024.110444

IF: 3.8

2024-01-01

Materials Today Communications

Abstract:Polysilicon serves as a primary raw material in the production of solar cells and semiconductors. However, its impurity content, particularly boron, poses significant challenges during the chemical vapor deposition (CVD) process. Therefore, it is essential to investigate the behavior of boron impurities during CVD. In this study, we conducted first-principles calculations to explore the adsorption behavior and deposition mechanism of boron-containing gases (BCl3, BHCl2, B2H6) on the Si(100) surface. We considered different adsorption sites and performed a systematic analysis of various adsorption systems' adsorption energy, charge transfer, and electronic properties. Our findings indicate that BCl3, BHCl2, and B2H6 molecules undergo dissociative chemisorption at specific adsorption sites. Moreover, charge transfer analysis confirms that each of these adsorbed molecules functions as an electron acceptor. Subsequent analyses, including total charge density (TCD), charge density difference (CDD), total density of states (TDOS), and projected density of states (PDOS), collectively underscore the robust electronic interactions between the gaseous molecules and the Si(100) surface. Through the computation of transition states and energy barriers across three potential reaction pathways, we identify a predominant sequence: BCl3 -> BCl2+Cl -> BCl+Cl -> B+Cl, that governs boron impurity formation on the Si(100) surface during CVD. Our work elucidates the underlying microscopic mechanisms of boron-containing gas adsorption and deposition in the CVD context.
INTERACTION BETWEEN Li ATOMS ON Si(100)2×1 AND PHASE CHANGE OF SURFACE STRUCTURE

PL CAO,RH ZHOU,XY ZHOU

DOI: https://doi.org/10.1016/0375-9601(91)90268-d

IF: 2.707

1991-01-01

Physics Letters A

Abstract:Using the ASED-MO method and cluster models, the adsorption geometry of Li on the Si(100)−2 × 1 surface and the interaction among the absorbed Li atoms have been calculated. A new model which can be used to explain the phase change from Si(100)-Li(2 × 1) to Si(100)−Li(1 × 1) at near monolayer coverage is proposed.
Single Adatom Site Exchange During the Ge Growth on Group V Element Covered Si(001)

En-Zuo Liu,Chong-Yu Wang

DOI: https://doi.org/10.1016/j.scriptamat.2006.09.017

IF: 6.302

2007-01-01

Scripta Materialia

Abstract:The site exchange between Ge and surfactant atoms in the growth of Ge on the group V element-covered Si(001) has been studied using first-principles total energy calculations. On the Bi-covered Si(001) and the As-covered Si(001), a single adatom site, exchange process can occur energetically, but with different pathways. The energy barriers for the single adatom site exchange are very small. The site exchange can therefore occur very easily. This will suppress the Ge diffusion, and favors the layer-by-layer growth mode. (c) 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Adsorption and Diffusion of Silver on SiC(111) and ZrC(111) Surfaces: A First Principles Study

Jiaxuan Li,Hongwei Zhu,Taowei Wang,Zelin Gao,Xiaotong Chen,Gang Xu,Bing Liu,Yaping Tang

DOI: https://doi.org/10.1115/icone31-137055

2024-01-01

Abstract:Abstract First-principles calculation have been implemented to investigate the adsorption and diffusion behaviors of Ag atom on β-SiC(111) and ZrC(111) surfaces. The configurations of Ag adsorbed on FCC site of β-SiC(111) surface and ZrC(111) surface have strongest stability and the adsorption energies of these two configurations were −2.775 eV and −3.192 eV, respectively. The electronic structures of these two most stable configurations were analyzed by charge density difference (CDD) plots and particle density of states (PDOS), and the results shows that there are strong interactions between the Ag atom and surface atoms, indicating chemical bonds are formed between the Ag atom and surface Si atoms or Zr atoms. The surface diffusion barriers and minimum energy paths (MEP) were determined by climbing image nudged elastic band (CI-NEB) method. The results suggest that the energy barriers of Ag atom diffused from the FCC site to the neighboring FCC site are 0.166 eV for β-SiC(111) surface and 0.150 eV for ZrC(111) surface. The surface diffusion coefficients of Ag atom on β-SiC(111) and ZrC(111) surfaces at 1273 K are 4.035 × 10−8 m2/s and 2.503 × 10−8 m2/s, respectively. The surface diffusion coefficient results indicate that it is easier for Ag atom diffuses on β-SiC(111) than on ZrC(111) surface.
Quantum Chemical Study of Adsorption and Dissociation of HfCl4 and H2O on Ge/Si(100) − (2×1): Initial Stage of Atomic Layer Deposition of HfO2 on SiGe Surface

Chen Wei,Zhang David Wei,Ren Jie,Lu Hong-Liang,Zhang Jian-Yun,Xu Min,Wang Ji-Tao,Wang Li-Kong

DOI: https://doi.org/10.1557/jmr.2005.0083

IF: 4

2005-01-01

Applied Physics Letters

Abstract:We investigated adsorption and dissociation of water and HfCl4 on a Ge/Si(100) − (2 × 1) surface with a density-functional theory. The Si–Ge and Ge–Ge homodimers are used to represent the Si1−xGex surface. (i) Water first adsorbs on the bare Ge/Si(100) − (2 × 1) surface and then dissociates into OH and H. The activation energy for adsorption of water on the Ge–Ge homodimer is much higher than that on the Si–Ge heterodimer. (ii) HfCl4 dissociates upon adsorption on the Ge/Si(100) − (2 × 1) surface into HfCl3 and Cl. No net activation barrier exists during the adsorption of HfCl4 on both SiGe surface dimers. The molecular adsorption state is found to be metastable according to the calculation, which implies that the reaction tends to move toward to the product rather than trapping in HfCl4 adsorbed state. The difference in the potential energy surface between reactions on Si–Ge and Ge–Ge dimers is due to different bond strengths.
Density Functional Theory Study of Initial Stage of ZrO2 Atomic Layer Deposition on Ge/Si(100)-(2×1) Surface

W Chen,DW Zhang,J Ren,HL Lu,JY Zhang,M Xu,JT Wang,LK Wang

DOI: https://doi.org/10.1016/j.tsf.2004.11.141

IF: 2.1

2005-01-01

Thin Solid Films

Abstract:The reaction mechanisms of ZrCl4 adsorption and dissociation on Ge/Si(100)-(2×1) surface as the initial stage of ZrO2 atomic layer deposition process are investigated with density functional theory (DFT). The Si–Si, Si–Ge and Ge–Ge one-dimer cluster models are employed to represent Ge/Si(100)-(2×1) surface with different Ge composition. The reaction of ZrCl4 with hydroxylated Ge/Si(100)-(2×1) surface forms a bridged ZrCl2 site, while on H-passivated surface, ZrCl3 site is formed. The reaction energy barrier of ZrCl4 with H-passivated SiGe surface is much higher than ZrCl4 with hydroxylated SiGe surface, which indicates that reaction proceeds more slowly on H-passivated surface than on OH-terminated surface. In addition, adsorption of ZrCl4 is favorable on Ge surface atoms than on Si surface atoms.
First-principles Studies on the Adsorptive Properties of Hydrogenated Si Cluster

Q Wang,Q Sun,JZ Yu,M Ishihara,Y Kawazoe

DOI: https://doi.org/10.1016/s0921-4526(99)00144-1

1999-01-01

Abstract:The adsorption of Si, O and Al adatoms on the most stable hydrogenated Si cluster (Si6H12) has been explored by using first principles. A special attention is paid to the comparisons of the similarity in adsorptions between the hydrogenated Si cluster and H-terminated Si surface: substitutional adsorption configuration is found for Si atom on Si6H12 cluster, similar to that on H-terminated Si surface; Si–O–Si adsorption configuration is found for O atom on Si6H12 cluster, similar to the case on H-terminated Si surface; nonadsorption of Al atom on Si6H12 cluster is found, similar to the very weak adsorption of Al atom on H-terminated Si surface. This similarity in adsorption between hydrogenated Si6H12 cluster and hydrogenated Si surface would be attributed to the fact: in hydrogenated Si6H12 cluster, H atoms have terminated the dangling bonds, and the Si atoms favor the bulk-like sp3 bonding even in this small cluster.
Investigation on Ge Surface Diffusion Via Growing Ge Quantum Dots on Top of Si Pillars

Yuwen Jiang,Delin Mo,Xiaofeng Hu,Shuguang Wang,Yulu Chen,Dongdong Lin,Yongliang Fan,Xinju Yang,Zhengyang Zhong,Zuimin Jiang

DOI: https://doi.org/10.1063/1.4961992

IF: 1.697

2016-01-01

AIP Advances

Abstract:We report on a simple and intuitionistic experimental method to quantitatively measure surface diffusion lengths of Ge adatoms on Si(001) substrates and its activation energy Ea, which is achieved by growing Ge quantum dots (QDs) on top surfaces of Si pillars with different radii and taking an advantage of preferential nucleation and growth of Ge QDs at the top surface edge of the pillars. Diffusion length of Ge adatom can directly be measured and determined by the radius of the pillar below which no QDs will nucleate and grow at the central region of the top surface of the Si pillar. With a growth rate v fixed at 0.1 Å/s, by changing the growth temperature, the diffusion lengths at different temperatures would be obtained. Arrhenius plot of diffusion length as a function of growth temperature gives the value of Ea of 1.37 eV. Likewise, with a growth rate v fixed at 0.05 Å/s, the Ea value is obtained to be 1.38 eV. Two Ea values agree well with each other, implying that the method is reliable and self-consistent. Moreover, for a fixed growth temperature, the surface diffusion lengths are found to be directly proportional to 1 / ν . It also agrees well with the theoretical prediction, further demonstrating the reliability of the method.
First-Principles Study of Adsorption of Pb Atoms on 3C-SiC

Michal Komorowicz,Kazimierz Skrobas,Konrad Czerski

DOI: https://doi.org/10.3390/ma16206700

2023-10-16

Abstract:Changes in the atomic and electronic structure of silicon carbide 3C-SiC (β-SiC), resulting from lead adsorption, were studied within the density functional theory. The aim of the study was to analyze the main mechanisms occurring during the corrosion of this material. Therefore, the investigations focused on process-relevant parameters such as bond lengths, bond energies, Bader charges, and charge density differences. To compare the magnitude of the interactions, the calculations were conducted for three representative surfaces: (100, 110, and 111) with varying degrees of lead coverage. The results indicate that chemisorption occurs, with the strongest binding on the hexagonal surface (111) in interaction with three dangling bonds. The adsorption energy rises with increasing coverage, especially as the surface approaches saturation. As a result of these interactions, atomic bonds on the surface weaken, which affects the dissolution corrosion.
First-principles Study of the Atomic and Electronic Structures of Pb on Si(001)

Y. Zhu,L. Ye,X. Wang

DOI: https://doi.org/10.1063/1.2360146

IF: 2.877

2006-01-01

Journal of Applied Physics

Abstract:The atomic and electronic structures of the Si(001)2×2-Pb and Si(001)2×1-Pb surfaces are investigated using the first-principles total energy calculations. The atomic structures consist of rows of Pb ad-dimers, which are buckled on Si(001)2×2-Pb but symmetric on Si(001)2×1-Pb, verifying previous experimental results. The calculated electronic densities of states and band structures of the optimized Si(001)2×2-Pb and Si(001)2×1-Pb surfaces coincide qualitatively with the previous experimental observations.

First-principles study of adsorption and diffusion on Ge/Si(0 0 1)-(2 · 8) and Ge/Si(1 0 5)-(1 · 2) surfaces

First-principles Study of Adsorption and Diffusion on Ge/Si(001)-(2×8) and Ge/Si(105)-(1×2) Surfaces

The Study of Ag Adsorbed on Ge(111) 2×1 Surfaces Using First-Principles Calculations

Adsorption, Diffusion, And Site Exchange For Ge Ad-Dimers On Sb-Covered Si(001) From First-Principles Total-Energy Calculations

Adsorption and diffusion of adatoms on Ru(0001): A first-principles study

Study of Si and Ge growth on Si(100) surface

Adsorption and diffusion of adatoms on Ru(0 0 0 1): A first-principles study

Gas Adsorption Investigation on SiGe Monolayer: A First-Principle Calculation

First-Principles Study of Metal Atoms Adsorbed on Sio2 Surface

First principles study of the adsorption of C60 on Si(111)

Strain Effect on Adatom Binding and Diffusion in Homo- and Heteroepitaxies of Si and Ge on ( 001) Surfaces.

A First-Principles Investigation into the Adsorption Behavior and Deposition Mechanism of Boron-Containing Gases on Si(100) Surfaces During Chemical Vapor Deposition

INTERACTION BETWEEN Li ATOMS ON Si(100)2×1 AND PHASE CHANGE OF SURFACE STRUCTURE

Single Adatom Site Exchange During the Ge Growth on Group V Element Covered Si(001)

Adsorption and Diffusion of Silver on SiC(111) and ZrC(111) Surfaces: A First Principles Study

Quantum Chemical Study of Adsorption and Dissociation of HfCl4 and H2O on Ge/Si(100) − (2×1): Initial Stage of Atomic Layer Deposition of HfO2 on SiGe Surface

Density Functional Theory Study of Initial Stage of ZrO2 Atomic Layer Deposition on Ge/Si(100)-(2×1) Surface

First-principles Studies on the Adsorptive Properties of Hydrogenated Si Cluster

Investigation on Ge Surface Diffusion Via Growing Ge Quantum Dots on Top of Si Pillars

First-Principles Study of Adsorption of Pb Atoms on 3C-SiC

First-principles Study of the Atomic and Electronic Structures of Pb on Si(001)