Formation and Morphology of 2H-Sic Whiskers by the Decomposition of Silicon Nitride

JB LI,G PENG,SR CHEN,ZG CHEN,JG WU

DOI: https://doi.org/10.1111/j.1151-2916.1990.tb05136.x

IF: 4.186

1990-01-01

Journal of the American Ceramic Society

Abstract:Decomposition of Si 3 N 4 at 1900 °C in a graphite vessel under a pressure of 10 atm.

What problem does this paper attempt to address?

Synthesis of 2H-Sic Whiskers by Decomposition of Si<sub>3</sub>N<sub>4</sub>

Jianbao Li,Gang Peng,Jiangang Hu,Kunihito Koumoto,Hiroaki Yanagida

DOI: https://doi.org/10.2109/jcersj.97.879

1989-01-01

Journal of the Ceramic Society of Japan

Abstract:Whiskers of 2H-SiC were synthesized by the decomposition of silicon nitride in a graphite reaction vessel at 1900°C under the nitrogen pressure of 1MPa. The obtained long whiskers were typically -10mm long and 0.05-0.1mm in diameter and short whiskers were -0.1mm long and -10μm in diameter. Morphology observations suggested that they had grown by the spiral growth mechanism.
Synthesis of Beta-Sic Nanowhiskers by High Temperature Evaporation of Solid Reactants

YJ Wu,JS Wu,W Qin,D Xu,ZX Yang,YF Zhang

DOI: https://doi.org/10.1016/j.matlet.2004.03.002

IF: 3

2004-01-01

Materials Letters

Abstract:β-SiC nanowhiskers were synthesized in large scale by evaporating the solid mixtures of silicon and silicon dioxide in a graphite crucible heated by a high-frequency induction system. Carbon source used for formation of the nanowhiskers came from the cheap common high-purity graphite at 1600 °C. XRD and TEM show that the nanowhiskers are crystalline β-SiC, and have diameters ranging from 15 to 50 nm and length up to several micrometers. Most of the nanowhiskers were wirelike and some nanowhiskers have high density stacking faults in the structure. The normal direction of the stacking layers ([111]) tilts by 12° with respect to the growth orientation ([223]). The growth mechanism of nanowhiskers is based on the reaction between silicon monoxide and carbon monoxide.
Growth of 5H-type silicon carbide whisker

Yiya Peng,Zhaoyu Meng,Chang Zhong,Jun Lu,Weichao Yu,Yitai Qian

DOI: https://doi.org/10.1016/S0025-5408(01)00653-5

IF: 5.6

2001-01-01

Materials Research Bulletin

Abstract:During a study of graphitization in a commercial Acheson furnace, alpha silicon carbide whiskers were accidentally found, which belongs to the 5H-type. The whiskers are about 2–300 μm in diameter and 5–50 mm long. The whiskers were studied by XRD and SEM, and the formation conditions of the whiskers were discussed.
Synthesis and characterization of silicon carbide whisker arrays prepared by thermal evaporation method

LIN Jing,CHEN Jianjun,YANG Guangyi,WU Renbing,ZHAI Rui,WU Lingling,PAN Yi

DOI: https://doi.org/10.3321/j.issn:1000-3851.2007.05.015

2007-01-01

Abstract:SiC whiskers arrays were prepared by thermal evaporation of Si onto two carbon templates: Graphite plate and PAN-carbon fiber at 1600°C in different levels of vacuum. The XRD analyses and FESEM observations reveal that the products are 3C-SiC whisker arrays: Whisker forests standing on the graphite plate and tube brush shaped whisker arrays around the carbon fibers, respectively. The dimensions of the whiskers grown on the two templates are about 100 nm in diameter and 50μm in length. Due to the quantum confinement effect of nano-materials, a photoluminescence peak locating around 468 nm is observed under 380 nm excitation at room temperature. The multi-place selected area electron diffraction (SAED) demonstrates that the SiC whiskers are single crystals, growing in [111] direction. Based on the fact that the silicon melt and carbon templates were separated throughout the whole process, the vapor-solid reaction growth mechanism of the SiC whiskers is discussed.
Syntheses and Growth Mechanisms of 3C-Sic Nanostructures from Carbon and Silicon Powders.

J. Zhu,X. Xiong,H. T. Chen,X. L. Wu,W. C. Zhang,Paul K. Chu

DOI: https://doi.org/10.1166/jnn.2009.1323

2009-01-01

Journal of Nanoscience and Nanotechnology

Abstract:Cubic silicon carbide (3C-SiC) nanostructures such as needle- and Y-shaped nanowhiskers, smooth and pagoda-shaped nanorods are synthesized on a large scale from activated carbon and silicon powders at 1250 degrees C under atmospheric pressure. The use of ball-milled silicon powders results in the formation of nanowires and nanowhiskers, whereas non-milled silicon powders lead to nanorods together with unreacted silicon powders. Residual oxygen in the growth chamber initiates the carburization reactions which can proceed without further oxygen consumption. The size and morphology of the as-synthesized 3C-SiC nanostructures are observed to be related to the size and morphology of the starting silicon particles. An oxygen-assisted gas-solid model is proposed to explain the observed nanostructures.
Direct observation of the growth process of silicon carbide nanowhiskers by vapor–solid process

Guangyi Yang,Renbing Wu,Yi Pan,Jianjun Chen,Rui Zhai,Lingling Wu,Jing Lin

DOI: https://doi.org/10.1016/j.physe.2007.03.005

2007-01-01

Physica E: Low-Dimensional Systems and Nanostructures

Abstract:Silicon carbide (3C–SiC) nanowhiskers were synthesized in a special vapor–solid process. In this process, silicon powder and carbon black were used as reactants, but they were separated by a thin and holed alumina plate so that the formation of SiC nanowhiskers is attributed to the reaction of gaseous silicon with carbon black particles. X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were employed to characterize the product. Based on the characterizations, a formation mechanism of SiC nanowhiskers is proposed.
Synthesis of alpha-Si3N4 whiskers or equiaxed particles from amorphous Si3N4 powders

Zunlan Hu,Jian Liu,Zhipeng Xie

DOI: https://doi.org/10.1016/j.ceramint.2020.06.147

IF: 5.532

2020-01-01

Ceramics International

Abstract:Silicon nitride (Si3N4) particles with different morphologies have been used in many fields. In this work, alpha-Si3N4 whiskers and granular particles with high-phase purity were successfully tailored by the controllable crystallisation process of amorphous Si3N4 powders under different N-2 pressure. Impressively, alpha-Si3N4 whiskers were prepared by simply heat treating amorphous Si3N4 powders at 1550 degrees C for 2 h under the low N-2 pressure of 0.2 MPa, whereas equiaxed alpha-Si3N4 particles with uniform size of similar to 280 nm were obtained under an elevated N-2 pressure of 2.0 MPa. With the evaluated N-2 pressures and temperatures, large scale alpha-Si3N4 whiskers or equiaxed alpha-Si3N4 particles could be produced. The growth mechanisms of the alpha-Si3N4 particles with distinct morphologies were rationally proposed, and these consist of two main growth processes. First, amorphous Si3N4 powders decomposed into Si(g) and N-2(g) under high-temperature treatment. Subsequently, N-2(g) dominated the recombination of the evaporated chemical with the Si3N4 molecule. The initial N-2 concentration, which plays a key role in tailoring the shape and size of products, was controlled by the N-2 pressure.
A New Route to Synthesize SiC−AlN Solid Solution Whiskers

Guanghua Liu,Kexin Chen,Jiangtao Li,Heping Zhou,Lin Mei

DOI: https://doi.org/10.1021/cg701130k

IF: 4.01

2008-01-01

Crystal Growth & Design

Abstract:SiC-AlN solid solution whiskers have been synthesized by heating a mixture of alpha-Si3N4, Al2O3, MgO, and Y2O3 in a graphite crucible in a N-2 atmosphere. The as-synthesized whiskers are well-crystallized with a width of 0.5-5 mu m and a length of 0.1-1 mm. According to the experimental and thermodynamical calculation results, the formation mechanism of SiC-AlN solid solution is discussed. It is proposed that the SiC-AlN whiskers are produced via the vapor-solid (VS) process.
Morphology of Sic Whisker in Whisker Reinforced Reaction Bonded Sic Composite

Shuang Li,Yu Min Zhang,Jie Cai Han,Yu Feng Zhou

DOI: https://doi.org/10.4028/www.scientific.net/amr.457-458.422

2012-01-01

Abstract:SiC whisker was introduced into reaction bonded silicon carbide to produce high performances composite by slip casting and reaction sintering. This study aimed at morphology of SiC whisker in the reaction bonded silicon carbide ceramics. The whisker was homogeneously dispersed into SiC/C suspension by ball-milling and ultrasonic dispersion. By chemical etching, the whisker displays the original burl profile on the polished surface of the composite. The raise of whisker fraction leads to an increase of porosity of the green body; and thus a decrease of density of the sintered body. For the specimen with 25 wt.% whisker, the rapid reaction of carbon with excess molten silicon leads to the missing of burl profile on the whisker surface. It is speculated that β-SiC on the whisker surface dissolved in the molten silicon during liquid silicon infiltration.
Prism-shaped SiC nanowhiskers

Renbing Wu,Guangyi Yang,Yi Pan,Jianjun Chen,Rui Zhai,Lingling Wu,Jing Lin

DOI: https://doi.org/10.1016/j.jallcom.2006.11.076

IF: 6.2

2008-01-01

Journal of Alloys and Compounds

Abstract:A novel nanostructured, prism-shaped β-SiC nanowhiskers have been synthesized by a reaction of carbon black and Si at 1500°C for 12h. Various durations of heating gave different growth stages that led to varied product morphologies. X-ray powder diffraction (XRD), field emission scanning electron microscope (FESEM) and high resolution transmission electron microscope (HRTEM) were used to characterize the products. These characterizations indicated that prism-shaped SiC nanowhiskers with a diameter of about 80–200nm and the length up to several micrometers are straight, single crystalline β-SiC and the growth direction is along [111]. The results also show that the nucleation and growth process of the nanowhiskers seem to be a vapor–solid mechanism, and that the total heating time during the reaction process is a critical factor for the formation of prism-shaped SiC nanowhiskers. Some unique optical properties are found in the Raman spectroscopy that has red shift about 8cm−1 relative to the bulk β-SiC.
The Microstructure of Β-Sic Whiskers

Y YAN,J CHEN,LC WANG,Q LI,D FENG,L CAO,CK YAO

DOI: https://doi.org/10.1016/0167-577x(89)90172-9

IF: 3

1989-01-01

Materials Letters

Abstract:The microstructure of β-SiC whiskers was identified and analyzed by high-resolution electron microscopy (HREM). The whiskers are characterized by one-dimensionally disordered structure. HREM shows that there is a high density of stacking faults and microtwins lying on the close-packed plane perpendicular to the whisker axis. The different types of stacking faults can be distinguished with HREM imaging.
Synthesis of Bamboo‐like SiC Whiskers from Waste Silica Fume

Qingcui Li,Chang-An Wang,Shengnian Tie

DOI: https://doi.org/10.1002/crat.201300340

2014-01-01

Crystal Research and Technology

Abstract:A process for the utilization of wasted silica fume is proposed in this work. Silicon carbide (SiC) whiskers several tens of micrometers in length and with a bamboo‐like morphology have been successfully synthesized by a carbothermal reduction process using purified silica fume as the silicon source. The morphology and structure of SiC whiskers were investigated by X‐ray diffraction, Raman spectroscopy, scanning electron microscopy, and high‐resolution transmission electron microscopy. Studies found that the as‐synthesized whiskers were grown as single‐crystalline β‐SiC along the (111) growth direction. The whiskers consisted of hexagonal stems randomly decorated with larger‐diameter knots along their whole length. On the basis of the characterization results, a vapor–solid process was discussed as a possible growth mechanism of the β‐SiC whiskers.
Growth of platelike and branched single-crystalline Si3N4 whiskers

Weiyou Yang,Zhipeng Xie,Jingjing Li,Hezhuo Miao,Ligong Zhang,Linan An

DOI: https://doi.org/10.1016/j.ssc.2004.07.032

IF: 1.934

2004-01-01

Solid State Communications

Abstract:In this communication, we report for the first time the growth of platelike and branched Si3N4 whiskers via catalyst-assisted pyrolysis of polymeric precursors. The as-prepared whiskers are single crystalline with a uniform thickness and width. The thickness and width of the Si3N4 whiskers range from 200 to 300nm and 800 to 1200nm, respectively. The platelike α-Si3N4 whiskers grew along [010] direction, while the branches grew along [001] direction. A growth mechanism based on solid–liquid–gas–solid reaction/crystallization is proposed. The formation of platelike whiskers instead of cylindrical whiskers is attributed to an anisotropic growth at an early nucleation/growth stage.
Fabrication and mechanism of 6H-type silicon carbide whiskers by physical vapor transport technique

Yonggui Shi,Jianfeng Yang,Hulin Liu,Peiyun Dai,Bobo Liu,Zhihao Jin,Guanjun Qiao,Hailiang Li

DOI: https://doi.org/10.1016/j.jcrysgro.2012.03.055

IF: 1.8

2012-01-01

Journal of Crystal Growth

Abstract:In this paper, silicon carbide whiskers (SiCw) were fabricated by the physical vapor transport (PVT) technique at 2293K with Fe as the catalyst. X-ray diffraction, scanning electronic microscope, energy-dispersive X-ray spectroscopy and transmission electron microscopy were used to identify the phase formation and morphology of the SiCw. The results showed that 6H-SiCw with growth direction of [0001] were obtained with the diameters ranging from 0.2μm to 4μm, and the length up to 700μm. The whiskers appeared as a cluster characteristic on the activated carbon fiber. Meanwhile, the catalyst ball at the tip of each whisker indicated the vapor–liquid–solid growth mechanism for 6H-SiCw.The growth mechanism was investigated on the basis of the physical and chemical phenomena during the PVT growth process of SiCw. It was found that high temperature guaranteed the evaporation of raw materials to form the catalyst, Si- and C-containing vapor specials and promoted the nucleation and growth of 6H-SiCw. Finally, a growth model was proposed.
Combustion Synthesis of Β-Sialon Whiskers

Rl Fu,Kx Chen,Jmf Ferreira

DOI: https://doi.org/10.4028/www.scientific.net/kem.280-283.1241

2005-01-01

Abstract:In this paper, b-SiAlON whiskers were synthesized by combustion of silicon and aluminium powders with SiO2 and Y2O3 as additives and a-Si3N4 or b-SiAlON powders as diluents. SEM observation of the products showed that the crystals with an aspect ratio higher that 5, which could be assigned to almost pure and well crystallized b-SiAlON. The influence of the amount of NH4F additive, the type of diluent on the phase formation and on the morphology of products was investigated.
High Yield Silicon Carbide Whiskers from Rice Husk Ash and Graphene: Growth Method and Thermodynamics

Jingpeng Chen,Qingqiang Kong,Zhuo Liu,Zhihong Bi,Hui Jia,Ge Song,Lijing Xie,Shouchun Zhang,Cheng-Meng Chen

DOI: https://doi.org/10.1021/acssuschemeng.9b04728

2019-10-19

Abstract:A new stacking bed method to prepare high-quality silicon carbide whiskers (SiCws) with high yield has been proposed. To provide a steady and high concentration SiO atmosphere during the carbothermal reaction, the mixture of graphene and rice husk ash is used as a SiO generator, which is different from the traditional methods using sole silicon sources. The as-prepared whiskers, growing along the direction of [111], show a diameter of 30–120 nm. SiCws obtained by the optimized approach exhibit a higher stacking fault (SF) density. As indicated by thermal gravimetric mass spectrometry results, SiO gas is a key factor affecting the yield and SFs of SiC whiskers. Furthermore, combined with the chemical reaction thermodynamics, the growth mechanism of whiskers is presented following the vapor–solid mode. This contribution provides new insights into the industrial production of high value-added carbide whiskers.

chemistry, multidisciplinary,engineering, chemical,green & sustainable science & technology
Synthesis mechanism of α-Si3N4 whiskers via SiO vapor in reaction bonded Si3N4-SiC composite

Chenhong Ma,Yong Li,Peng Jiang,Xi Yue

DOI: https://doi.org/10.1016/j.jallcom.2023.168723

IF: 6.2

2023-03-01

Journal of Alloys and Compounds

Abstract:An indirect nitridation mechanism was designed to realize a high conversion rate to α-Si3N4 whiskers in reaction bonded Si3N4-SiC composite via VS mechanism, in which the dominant vapor-phase source of reactants is SiO vapor produced by the active oxidation of Si. The role played by the temperature-time program and addition of ultra-fine Si powder on the formation of SiO vapor and the resulting Si3N4 whiskers was clarified based on the experimental results and the thermodynamic calculations. The result shows that during sintering, in the presence of trace O2, ultra-fine Si particles preferentially undergo active oxidation and volatilized completely in the form of SiO(g). While an equilibrium of SiO(g) and Si(s) is formed on the surface of the coarse Si particle meanwhile. By stepped holding temperature further, this equilibrium is constantly upgraded, so the coarse Si particles is evaporated as SiO(g) shell layer by layer. Massive α-Si3N4 whiskers is formed by SiO(g) nitridation while the stepped holding temperature sintering. A reasonable model of the controllable indirect nitridation mechanism was established.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Theoretical design and preparation of SiC whiskers catalyzed by Fe-oxides on carbon fibers

Jiayu Zhang,Mingwei Yan,Guangchao Sun,Xiang Li,Bianlei Hao,Kaiqi Liu

DOI: https://doi.org/10.1016/j.ceramint.2021.12.283

IF: 5.532

2022-04-01

Ceramics International

Abstract:This work reported an in-situ vapor-liquid-solid (VLS) preparation method of SiC whiskers (SiC w ) catalyzed by Fe-oxides on carbon fibers, which could provide a method for preparing SiC w /carbon fiber composites. The mechanism of the SiC w was theoretically designed and then experimentally validated using XRD, SEM, and TEM. Fe2O3 was chosen as a Fe-oxide catalyst and directly loaded on carbon fibers by the impregnation process. The results showed that SiC w were successfully prepared on carbon fibers at 1600 °C under the protection of flowing nitrogen, utilizing quartz and graphite as gas-phase generation sources. The prepared SiC w were β-SiC and grew along the (111) crystal plane, with spherical droplets on top formed by Fe2O3 catalysts. SiC w were microstructurally observed to have widths of 500–1000 nm and lengths of more than 15 μm, respectively.

materials science, ceramics
Formation of SiC-Al Interface in SiC Whisker Reinforced Al Composite

Hongmei Wei,Hongyu Xu,Lin Geng,Yudong Huang

DOI: https://doi.org/10.4028/www.scientific.net/amr.306-307.857

2011-01-01

Advanced Materials Research

Abstract:Crystallization behavior of melt aluminum on the surfaces of SiC whisker (SiCw) was analyzed based on the consideration to obtain the SiC-Al interfaces with the lowest energy in SiCw/Al composite. The interfacial structure was investigated to determine whether a specific orientation relationship exists between SiC and Al. Analysis results indicate that four kinds of orientation relationships possibly exist between SiC and Al when only the <110> crystal direction of the aluminum is considered as the firstly formed crystal direction along the concave joint line of <110> of the SiC whisker. Interfacial atom match bonding models were set up in theory and one kind of crystal orientation relationship has been proved by our previous experimental result.
Mechanical Properties of Silicon Nitride in Different Morphologies: In Situ Experimental Analysis of Bulk and Whisker Structures

Bokang Wang,Tanglong Bai,Weide Wang,Hongti Zhang

DOI: https://doi.org/10.3390/ma17184549

2024-09-16

Abstract:Silicon nitride (Si3N4) is widely used in structural ceramics and advanced manufacturing due to its excellent mechanical properties and high-temperature stability. These applications always involve deformation under mechanical loads, necessitating a thorough understanding of their mechanical behavior and performance under load. However, the mechanical properties of Si3N4, particularly at the micro- and nanoscale, are not well understood. This study systematically investigated the mechanical properties of bulk Si3N4 and Si3N4 whiskers using in situ SEM indentation and uniaxial tensile strategies. First, nanoindentation tests on bulk Si3N4 at different contact depths ranging from 125 to 450 nm showed significant indentation size effect on modulus and hardness, presumably attributed to the strain gradient plasticity theory. Subsequently, in situ uniaxial tensile tests were performed on Si3N4 whiskers synthesized with two different sintering aids, MgSiN2 and Y2O3. The results indicated that whiskers sintered with Y2O3 exhibited higher modulus and strength compared to those sintered with MgSiN2. This work provides a deeper understanding of the mechanical behavior of Si3N4 at the micro- and nanoscale and offers guidance for the design of high-performance Si3N4 ceramic whiskers.

Formation and Morphology of 2H-Sic Whiskers by the Decomposition of Silicon Nitride

Synthesis of 2H-Sic Whiskers by Decomposition of Si&lt;sub&gt;3&lt;/sub&gt;N&lt;sub&gt;4&lt;/sub&gt;

Synthesis of Beta-Sic Nanowhiskers by High Temperature Evaporation of Solid Reactants

Growth of 5H-type silicon carbide whisker

Synthesis and characterization of silicon carbide whisker arrays prepared by thermal evaporation method

Syntheses and Growth Mechanisms of 3C-Sic Nanostructures from Carbon and Silicon Powders.

Direct observation of the growth process of silicon carbide nanowhiskers by vapor–solid process

Synthesis of alpha-Si3N4 whiskers or equiaxed particles from amorphous Si3N4 powders

A New Route to Synthesize SiC−AlN Solid Solution Whiskers

Morphology of Sic Whisker in Whisker Reinforced Reaction Bonded Sic Composite

Prism-shaped SiC nanowhiskers

The Microstructure of Β-Sic Whiskers

Synthesis of Bamboo‐like SiC Whiskers from Waste Silica Fume

Growth of platelike and branched single-crystalline Si3N4 whiskers

Fabrication and mechanism of 6H-type silicon carbide whiskers by physical vapor transport technique

Combustion Synthesis of Β-Sialon Whiskers

High Yield Silicon Carbide Whiskers from Rice Husk Ash and Graphene: Growth Method and Thermodynamics

Synthesis mechanism of α-Si3N4 whiskers via SiO vapor in reaction bonded Si3N4-SiC composite

Theoretical design and preparation of SiC whiskers catalyzed by Fe-oxides on carbon fibers

Formation of SiC-Al Interface in SiC Whisker Reinforced Al Composite

Mechanical Properties of Silicon Nitride in Different Morphologies: In Situ Experimental Analysis of Bulk and Whisker Structures

Synthesis of 2H-Sic Whiskers by Decomposition of Si<sub>3</sub>N<sub>4</sub>