Research on the Feasibility of Thin Film Capacitance Material with Double-side-etch Process

FAN Hai-xia,WANG Shou-xu,HE Wei,DONG Ying-tao,HU Xin-xing,SU Xin-hong,LIU Feng
DOI: https://doi.org/10.3969/j.issn.1009-0096.2013.05.017
2013-01-01
Abstract:The embedded capacitor is made by means of etching thin-film dielectric material,and the thickness of the material is very thin.Thickness of dielectric material is almost between 8 m and 50 m,therefore,it’s easy to fold and break the core when pattern imaging.At present,the most practicable method is single-sideetch process.This paper discuss the influence of capacitance accuracy and reliability of capacitance material when double-side-etch process is adopted which results in the analysis of the feasibility of this process.
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