Abstract:A new analytical current-voltage (I-V) model for submicrometer and deep-submicrometer metal-oxide-semiconductor field-effect transistors (MOSFETs) is developed based on a newly developed charge-control model in metal-oxide-semiconductor structure. Threshold-voltage shift due to quantum mechanical effects, finite inversion layer thickness effects (inversion layer capacitance), as well as increased depletion layer charge density after the strong inversion point are incorporated in the model. Inversion layer charge density with respect to the gate voltage from depletion through weak inversion to strong inversion regions with smooth transition between different regions is given by one expression, Two-dimensional short channel effects such as channel length modulation, drain-induced barrier lowering, mobility degradation, and carrier velocity saturation, as well as polysilicon depletion effects are included in the I-V model. Model results are compared with both numerical results of carrier sheet density and surface potential in the channel, and experimental results of I-V data for submicrometer and deep-submicrometer MOSFETs down to 0.09-mum effective gate length and the accuracy of the model are demonstrated.

Surface layer effective density-of-states (SLEDOS) and its applications in MOS devices modeling

Characterization and Modelling of Carrier Distribution and Gate Capacitance in MOS Structure Inversion Layer

A New Correction Model for Quantum Mechanical Effects in MOS Structure

A New Charge Model Including Quantum Mechanical Effects in MOS Structure Inversion Layer

MOS Structure Charge Control Model Based on Surface Layer Effective Density-of-States

A New Method To Investigate Quantum Mechanical Effects In Mos Structure Strong Inversion Layer

New Strategy of Modeling Inversion Layer Characteristics in MOS Structure for ULSI Applications

MOS Structure Threshold Voltage Model by Rigorously Considering Quantum Mechanical Effect

An explicit surface potential model of bulk-MOSFETs with inclusion of poly-gate accumulation, depletion, and inversion effects

Direct Tunneling Current Model for MOS Devices with Ultra-Thin Gate Oxide Including Quantization Effect and Polysilicon Depletion Effect

Surface potential versus voltage equation from accumulation to strong inversion region for undoped symmetric double-gate MOSFETs

Analytical Charge-Control and I-V Model for Submicrometer and Deep-Submicrometer MOSFETs Fully Comprising Quantum Mechanical Effects

A Rigorous and Concise Surface Potential-Based Core Model for the Undoped Symmetric Double-Gate Metal-Oxide-Semiconductor Field Effect Transistors

Compact Modeling for Inversion Charge in Nanoscale DG-MOSFETs

Subband Structure And 2d Density-Of-States Analysis Of Quantized Inversion Layer In Mos Structure

Quantum Mechanical Consideration On Mosfet'S Characteristics And Scaling

Surface-potential-plus approach for next generation CMOS device modeling

Analytic MOSFET surface potential model with inclusion of poly-gate accumulation, depletion, and inversion effects

MOS device threshold voltage model considering quantum mechanical effect including multi-subband occupation

Fully depleted short-channel SOI LDD/LDS MDSFET model for VLSI circuits analysis