Abstract:Vertical topologies of on-chip silicon miniature multispiral stacked inductors are addressed, which have been fabricated by a 0.18-mu m CMOS process. A generalized topological circuit model is first developed with mutual capacitive and inductive couplings treated appropriately. A set of analytical equations is given for calculating all mutual frequency-independent (dc) inductances among different spirals. The partial-element equivalent-circuit method is implemented for capturing frequency- and temperature-dependent resistances and inductances (ac) of arbitrary spiral-stacked geometries by which mutual inductive coupling between different spirals are investigated. According to the fabricated four- to six-spiral stacked inductors and the measured two-port S-parameters, modeling and experimental studies are carried out so as to verify applicability and scalability of the proposed topological model. Excellent agreement between them are achieved in the characterization of inductances and Q factors of all samples beyond their self-resonant frequencies.

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Experimental Characterization of Coupling Effects Between Two On-Chip Neighboring Square Inductors

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Vertical Topologies of Miniature Multispiral Stacked Inductors

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Experimental Characterisation Of On-Chip Octagonal Double-Helix Inductors On Silicon Substrates

Comparative Characteristics of On-Chip Single- and Double-Level Square Inductors

Characterization and Modeling of Multiple Coupled Inductors Based on On-Chip Four-Port Measurement

Compact Equivalent Circuit Model Of Two-Layer Spiral Inductors

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PERFORMANCE TRENDS OF ON-CHIP SPIRAL INDUCTORS FOR RFICS

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Local scalable description of global characteristics of various on-chip asymmetrically octagonal inductors

Experimental Characterization of On-Chip Single and Double-Coupling Spiral Inductors

Global Performance Evaluation of Various On-Chip Square Spiral Inductors on Gaas Substrates

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Coupling Effects of Adjacent Inductors on the Transformer in the Millimeter-Wave Regime