Abstract:X-ray photoemission (XPS) and Near Edge X-ray Absorption Fine Structure (NEXAFS) spectroscopy play an important role in investigating the structure and electronic structure of materials and surfaces. Ab-initio simulations provide crucial support for the interpretation of complex spectra containing overlapping signatures. Approximate core-hole simulation methods based on Density Functional Theory such as the Delta-Self-Consistent-Field ($\Delta$SCF) method or the transition potential (TP) method are widely used to predict K-shell XPS and NEXAFS signatures of organic molecules, inorganic materials and metal-organic interfaces at reliable accuracy and affordable computational cost. We present the numerical and technical details of our variants of the $\Delta$SCF and transition potential method (coined $\Delta$IP-TP) to simulate XPS and NEXAFS transitions. Using exemplary molecules in gas-phase, in bulk crystals, and at metal-organic interfaces, we systematically assess how practical simulation choices affect the stability and accuracy of simulations. These include the choice of exchange-correlation functional, basis set, the method of core-hole localization, and the use of periodic boundary conditions. We particularly focus on the choice of aperiodic or periodic description of systems and how spurious charge effects in periodic calculations affect the simulation outcomes. For the benefit of practitioners in the field, we discuss sensible default choices, limitations of the methods, and future prospects.

Ab initio simulation of core-hole effects on the X-ray absorption near edge structure of GaP

First-principle Calculations of the Structure and Elastic Properties of GaAs under Pressure

Theory Of Core-Hole Effects In 1s Core-Level Spectroscopy Of The First-Row Elements

The high-pressure phase transitions and vibrational properties of zinc-blende XTe (X = Zn, Cd, Hg): Performance of local-density-approximation density functional theory

High Magnetic Field Studies Of Charged Exciton Localization In Gaas/Alxga1-Xas Quantum Wells

Multiple-Scattering Effects in Gak-Edge Extended X-Ray Absorption Fine Structure Spectra of Gap, Gaas and Gasb Semiconductor Compounds

Structural and Electronic Properties of C-Bc2n Supper Hard Material: an Ab-Initio Study

First principles calculation of electronic properties and effective mass of zinc-blende GaN

The Nuts and Bolts of Ab-Initio Core-Hole Simulations for K-shell X-Ray Photoemission and Absorption Spectra

Ab Initio Study Of Energy Band Structures Of Gaas Nanoclusters

Ab Initio Calculation of Dielectric Function in Wurtzite GaN Based on Walter’s Model

Compositional effects on structural, electronic, elastic, piezoelectric and dielectric properties of GaInN alloys: a first-principles study

Local Structures of GaAs Semiconductor in High Shells Studied by MultipleScattering Extended Xray Absorption Fine Structure

Core Polarization In Semiconductors - Effects On Quasi-Particle Energies

First-principles Investigation on Optical Properties of GaN and InGaN Alloys

Electronic and optical properties of wurtzite GaN: A theoretical approach

Electronic structure and photoconductivity properties of GaP under high pressure

ORDERED STRUCTURES AND ELECTRONIC PROPERTIES OF (Gaas)1-Xge2x SYSTEM

On the Core Hole Effect to Valence Excitations: Tracking and Visualizing the Same Excitation in XPS Shake-Up and UV-Absorption Spectra

Theoretical Approach to the Electronic States and Core Exciton of Superlattice Znse/Gaas

A theoretical study of electronic and optical properties in wurtzite GaN