Abstract:A correlation is found between concentrations of interstitial oxide ions and protons in La2NiO4+δ, which is doped with Cu and Co to regulate the concentration of oxide ions. Protonic conductivity in the high‐temperature range is measured directly by a modified Hebb–Wagner direct current polarization method with La0.99Ca0.01NbO4−δ as a blocking electrode. Oxygen‐excess La2NiO4+δ (LNO) conducts oxide ions, electron holes, and hydroxide ions simultaneously on exposing to wet oxygen, exhibiting the potential as a cathode material in protonic ceramic fuel cells. Since the incorporation of protons in oxygen‐excess LNO is via the hydration reaction assisted by interstitial oxide ions, in this work, the concentration of interstitial oxide ions is reduced and increased by substituting Ni with Cu and Co, respectively. A higher concentration of interstitial oxide ions leads to a high proton concentration, indicating the predominant role of interstitial oxide ions in the hydration reaction, different from that in the oxygen‐deficient oxides, where protons are introduced by dissociative absorption of water molecules by oxygen vacancies. The theoretical calculation indicates that protons in Co‐doped LNO prefer to locate between the interstitial oxide ions and unshared apical oxide ions. A trapping effect is found between protons and the oxide ions near Cu, leading to decreased proton mobility. Protonic conductivity at 400–575 °C is then directly measured by a Hebb–Wagner direct current polarization method with La0.99Ca0.01NbO4−δ as the blocking electrode, enabling the observation that Co‐doped LNO has the highest protonic conductivity among the samples studied in this work.

Impedance Studies Of Dense Polycrystalline Thin Films Of La2nio4+Delta

Pulsed Laser Ablation of Epitaxial and Conductive LaNiO/sub 3/ Thin Films for Ferroelectric Device Applications

Measurement of Oxygen Transport Kinetics in Epitaxial La2NiO4+δ Thin Films by Electrical Conductivity Relaxation

Oxygen Exchange Kinetics on a Highly Oriented La0.5Sr0.5CoO3−δ Thin Film Prepared by Pulsed-Laser Deposition

Effect of LaNiO3 on the impedance and dielectric properties of CoFe2O4: a high temperature study

Oxygen-Deficiency-Activated Anomalous Transport in La2/3sr1/3mno3-Delta Thin Films Deposited by Laser Ablation

Study on PZT /lanio_3/ LaAlO_3 Heterostructures and Its Properties

Completely (001)-textured growth and electrical properties of Bi4Ti3O12/LaNiO3 heterostructures prepared by pulsed laser deposition on LaAlO3 single crystal substrates

Impact of Nitrogen Concentration on the Performance of LaAlO3(1−y/2)Ny Films for High-K Gate Dielectric Applications

Epitaxial Growth of Conductive LaNiO3 Thin Films by Pulsed Laser Ablation

Reduction of charge-transfer resistance at the solid electrolyte – electrode interface by pulsed laser deposition of films from a crystalline Li 2 PO 2 N source

Enhanced Grain Boundary Resistance Resulting in High Permittivity and Low Dielectric Loss in CaCu 3 Ti 4 O 12 /LaNiO 3

Insight Into An Unusual Lanthanum Effect On The Oxygen Reduction Reaction Activity Of Ruddlesden-Popper-Type Cation-Nonstoichiometric La2-Xnio4+Delta (X=0-0.1) Oxides

Interplay between electron correlations, magnetic state, and structural confinement in LaNiO3 ultrathin films

Superfast oxygen exchange kinetics on highly epitaxial LaBaCo2O5+δ thin films for intermediate temperature solid oxide fuel cells

Ferroelectricity of Ultrathin Ferroelectric Langmuir–Blodgett Polymer Films on Conductive LaNiO3 Electrodes

Growth and Characterization of the La_3Ni_2O_7-δ Thin Films: Dominant Contribution of the D_x^2-Y^2 Orbital at Ambient Pressure

In Situ Reflection High-Energy Electron Diffraction Observation of Epitaxial LaNiO3 Thin Films

Growth of Highly C-Axis-oriented Pb(Zr0.53Ti0.47) O3 Thin Films on LaNiO3 Electrodes by Pulsed Laser Ablation

High‐Temperature Protonic Conduction in La2NiO4+δ‐Based Ruddlesden–Popper Type Oxides: Correlation with Concentration of Interstitial Oxide Ions

Structure And Dielectric Properties Of Amorphous Laalo3 And Laaloxny Films As Alternative Gate Dielectric Materials