Abstract:Two kinds of Zr-rich Zr-aluminate films for high-kappa gate dielectric applications with the nominal composition of (ZrO2)(0.8)(Al2O3)(0.2) and (ZrO2)(0.9)(Al2O3)(0.1), were deposited on n-type silicon wafer by pulsed laser deposition (PLD) technique at different deposition conditions. X-ray diffraction (XRD) reveals that the (ZrO2)(0.8)(Al2O3)(0.2) film could remain amorphous after being rapid thermal annealed (RTA) at the temperature above 800 degrees C, while the other one displays some crystalline peaks at 700 degrees C. The energy gap calculated from optical transmittance spectrum of (ZrO2)(0.8)(Al2O3)(0.2) film on quartz is about 6.0 eV. Sputtering depth profile of X-ray photoelectron spectroscopy and Auger electron spectroscopy indicate that a Zr-Si-O interfacial layer was formed at the near surface of the silicon substrate. The dielectric constant of the (ZrO2)(0.8)(Al2O3)(0.2) film has been determined to be 22.1 by measuring a Pt/(ZrO2)(0.8)(Al2O3)(0.2)/Pt MIM structure. An EOT of 1.76 nm with a leakage current density of 51.5 mA/cm(2) at 1 V gate voltage for the film deposited in N-2 were obtained. Two different pre-treatments of Si substrates prior to depositions were also carried out and compared. The results indicate that a surface-nitrided Si substrate can lead to a lower leakage current density. The amorphous Zr-rich Zr-aluminate films fabricated by PLD have promising structure and dielectric properties required for it candidate material for high-kappa Late dielectric applications. (c) 2005 Elsevier B.V. All rights reserved.

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