Degradation of AlGaN/GaN High Electron Mobility Transistors with Different AlGaN Layer Thicknesses under Strong Electric Field

Yang Ling,Ma Jing-Jing,Zhu Cheng,Hao Yue,Ma Xiao-Hua,杨凌,马晶晶,朱诚,郝跃,马晓华
DOI: https://doi.org/10.1088/0256-307X/27/2/027102
2010-01-01
Chinese Physics Letters
Abstract:The degradation of AlGaN/GaN high electron mobility transistors (HEMTs) has a close relationship with a model of traps in AlGaN barriers as a result of high electric field. We mainly discuss the impacts of strong electrical field on the AlGaN barrier thickness of AlGaN/GaN HEMTs. It is found that the device with a thin AlGaN barrier layer is more easily degraded. We study the degradation of four parameters, i.e. the gate series resistance R-Gate, channel resistance R-channel, gate current I-G,I-off at V-GS = -5 and V-DS = 0.1 V, and drain current I-D,I-max at V-GS = 2 and V-DS = 5 V. In addition, the degradation mechanisms of the device electrical parameters are also investigated in detail.
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